Topological insulators are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi2Te3 and Bi2Se3 crystals. Theoretical models, materials properties, and experimental results on two-dimensional and three-dimensional topological insulators are reviewed, and both the topological band theory and the topological field theory are discussed. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. The theory of topological superconductors is reviewed, in close analogy to the theory of topological insulators.

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Topological insulators and superconductors

Graphene-Like Two-Dimensional Materials

We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e.g. heterostructures, quantum wells, inversion layers) so that the unique features of graphene electronic properties arising from its gap- less, massless, chiral Dirac spectrum are highlighted. Experiment and theory as well as quantum and semi-classical transport are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. Although the emphasis of the review is on those aspects of graphene transport where reasonable consensus exists in the literature, open questions are discussed as well. Various physical mechanisms controlling transport are described in depth including long- range charged impurity scattering, screening, short-range defect scattering, phonon scattering, many-body effects, Klein tunneling, minimum conductivity at the Dirac point, electron-hole puddle formation, p-n junctions, localization, percolation, quantum-classical crossover, midgap states, quantum Hall effects, and other phenomena.

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Electronic transport in two-dimensional graphene

The appealing electronic properties of the monolayer semiconductor molybdenum disulphide make it a candidate material for electronic devices. The observation of tightly bound trions in this system—which have no analogue in conventional semiconductors—opens up possibilities for controlling these quasiparticles in future optoelectronic applications.

Tightly bound trions in monolayer MoS2

Synthesis of carbon nanotubes by chemical vapor deposition over patterned catalyst arrays leads to nanotubes grown from specific sites on surfaces. The growth directions of the nanotubes can be controlled by van der Waals self-assembly forces and applied electric fields. The patterned growth approach is feasible with discrete catalytic nanoparticles and scalable on large wafers for massive arrays of novel nanowires. Controlled synthesis of nanotubes opens up exciting opportunities in nanoscience and nanotechnology, including electrical, mechanical, and electromechanical properties and devices, chemical functionalization, surface chemistry and photochemistry, molecular sensors, and interfacing with soft biological systems.

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Carbon Nanotubes: Synthesis, Integration, and Properties

Nanowire field-effect transistors (NW-FETs) are emerging as powerful sensors for detection of chemical/biological species with various attractive features including high sensitivity and direct electrical readout. Yet to date there have been limited systematic studies addressing how the fundamental factors of devices affect their sensitivity. Here we demonstrate that the sensitivity of NW-FET sensors can be exponentially enhanced in the subthreshold regime where the gating effect of molecules bound on a surface is the most effective due to the reduced screening of carriers in NWs. This principle is exemplified in both pH and protein sensing experiments where the operational mode of NW-FET biosensors was tuned by electrolyte gating. The lowest charge detectable by NW-FET sensors working under different operational modes is also estimated. Our work shows that optimization of NW-FET structure and operating conditions can provide significant enhancement and fundamental understanding for the sensitivity limits ...

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Subthreshold Regime has the Optimal Sensitivity for Nanowire FET Biosensors

Graphene-like two-dimensional (2D) materials not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe, a III–VI semiconductor, not only is a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multilayer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the device’s field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material’s intrinsic transport behavior and the effect of dielectric substrate. The sample’s field effect and Hall mobilities over the range of 20–300 K fall in the range of 0.1–2.0 × 103 cm2/(V ...

Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi(2)Se(3) nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi(2)Te(3), and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi(2)Se(3) nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room-temperature magneto-electronic applications.

Two-dimensional transport-induced linear magneto-resistance in topological insulator Bi2Se3 nanoribbons.

We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room temperature magneto-electronic applications.

Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

We demonstrate a new protein detection methodology based upon frequency domain electrical measurement using silicon nanowire field-effect transistor (SiNW FET) biosensors. The power spectral density of voltage from a current-biased SiNW FET shows 1/f-dependence in frequency domain for measurements of antibody functionalized SiNW devices in buffer solution or in the presence of protein not specific to the antibody receptor. In the presence of protein (antigen) recognized specifically by the antibody-functionalized SiNW FET, the frequency spectrum exhibits a Lorentzian shape with a characteristic frequency of several kilohertz. Frequency and conventional time domain measurements carried out with the same device as a function of antigen concentration show more than 10-fold increase in detection sensitivity in the frequency domain data. These concentration-dependent results together with studies of antibody receptor density effect further address possible origins of the Lorentzian frequency spectrum. Our resu...

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Xuan P. A. Gao

Papers

Subthreshold Regime has the Optimal Sensitivity for Nanowire FET Biosensors

Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

Two-dimensional transport-induced linear magneto-resistance in topological insulator Bi2Se3 nanoribbons.

Two-dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

Frequency Domain Detection of Biomolecules Using Silicon Nanowire Biosensors