Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

Synthesis and Applications of III-V Nanowires

http://iopscience.iop.org/article/10.1088/1361-6463/aa5ab3/pdf

A review of III–V nanowire infrared photodetectors and sensors

Ultrathin SnS nanobelts were synthesized via physical vapor deposition (PVD). Furthermore, high performance near-infrared (NIR) photodetectors based on SnS nanobelts showed an excellent photoresponsivity of 300 A W−1 under 800 nm light illumination with an external quantum efficiency of 4.65 × 104% and a detectivity of 6 × 109 Jones, as well as fast rise and decay times (τrise = 36 ms and τdecay = 7 ms), suggesting a promising future for the utilization of the SnS nanobelts in practical NIR light sensors.

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12067

Recent advances in low-dimensional semiconductor nanomaterials and their applications in high-performance photodetectors

Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09  -orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V−1 s−1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W−1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors. The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.

/pdf/ultra-fast-photodetectors-based-on-high-mobility-indium-g7mdjkwv55.pdf

Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires.

Single-nanowire photodetectors have potential applications in integrated optoelectronic devices and systems. Here, bandgap-engineered GaAs0.26Sb0.74 alloy nanowires were synthesized via a chemical vapor deposition method. The synthesized nanowires are single crystals grown along the [111]B direction with length up to 50 μm and diameter ranging from 40 to 500 nm. Photodetectors are built based on these single-alloy nanowires, which show a wide response in the near-infrared region with a high response peak located in the optical communication region (1.31 μm), as well as an external quantum efficiency of 1.62 × 105%, a responsivity of 1.7 × 103 A W−1 and a short response time of 60 ms. These novel near-infrared photodetectors may find promising potential applications in integrated infrared photodetection, thermal imaging, information communication and processing.

https://iopscience.iop.org/article/10.1088/0268-1242/30/10/105033/pdf

Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μm

GaInPSb quaternary alloy nanowires were first synthesized via a simple chemical vapor deposition method. The synthesized nanowires’ length can reach up to 20 μm and diameter ranging from 50 to 100 nm. Raman measurements and high-resolution transmission electron microscopy image illustrate that the as-grown nanowires have a high crystallinity. Room temperature near-infrared photodetector based on as-prepared GaInPSb nanowires was also built for the first time. It shows a good contact with the electrode, and the device has a strong light response to light illumination. This novel near-infrared photodetector may find promising applications in integrated infrared photodetection, information communication, and processing.

Yadan Xu

Papers

Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μm

Fabrication of GaInPSb quaternary alloy nanowires and its room temperature electrical properties