Liang Ma

TL;DR: A simple one-step chemical vapor deposition approach is reported for the simultaneous growth of alloy MoS2xSe2(1-x) triangular nanosheets with complete composition tunability and both the Raman and the photoluminescence studies show tunable optical properties consistent with composition of the alloy nanOSheets.

TL;DR: The synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route is reported, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.

TL;DR: The growth of nanoribbon lateral heterostructures made of a CdS(x)Se(1-x) central region with epitaxial C dS lateral sides using a multistep thermal evaporation route with a moving source is reported.

TL;DR: Photoluminescence measurements indicate the InGaAs nanowires have strong light emission in near-infrared region, and for the first time, photodetector based on as-grown In GaAs Nanowires was constructed, showing good light response over a broad spectral range in infrared region.

TL;DR: Band-selective infrared photodetectors are constructed with InAs(x)P(1-x) alloy nanowires from the complete composition range (0 ≤ x ≤ 1) achieved by a new growth route combining the vapor-liquid-solid mechanism with an additional ion-exchange process.