Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.

Fine pattern forming method

A plug-type optical connector 10 is provided with a ferrule 22 and an aligning sleeve member 24. The aligning sleeve member 24 receives a portion of the ferrule 22 including an abutting end face 48 inside a bore 58 to prevent staining and damage and uses a movable shutter 54 to prevent light emitted through the ferrule 22 from leaking to the outside. The socket type optical connector 14 is provided with a ferrule 92 and a holding section 94. The optical connector 14 is not provided with an aligning sleeve member and further can hold a coated optical fiber by a holding section 94 behind the ferrule 92 by a radius of curvature of at least a prescribed minimum radius of curvature. Optical loss in the coated optical fiber can be reduced while effectively reducing the external dimensions in the direction of extension of the ferrule 92 at the time of use. An optical fiber connecting device that includes a combination of a pair of optical connectors is also provided to be suitably applied to an optical transmission line laid indoors.

Optical connector, optical fiber with connector, optical fiber connecting device, and optical fiber connection method

An electron beam exposure apparatus, which illuminates a mask with light emitted by a light source, photoelectrically converts the light patterned by the mask using a photoelectric converter, and exposes an object to be exposed with a patterned electron beam emitted by the photoelectric converter The apparatus includes an electron optical system for imaging the electron beam emitted by the photoelectric converter onto the object, an axial shifter for shifting an optical center of the electron optical system in a direction perpendicular to an optical axis, an axial deflector for deflecting the electron beam that propagates in the electron optical system, a region limiter for limiting a region of the mask to be projected onto the object via the photoelectric converter and the electron optical system to a partial region of the mask, and a scan controller for scanning the object with the region-limited electron beam by changing the partial region to be limited while controlling the axial shifter and axial deflector

Electron beam exposure apparatus

There is provided a pellicle in which the mask-bonding agglutinant layer has the adhesion strength of 1 N/m through 100 N/m, preferably 4 N/m through 80 N/m, and more preferably the agglutinant layer has a facial flatness of 15 micrometers or smaller, and still more preferably the membrane-bonding adhesive layer has a facial flatness of 15 micrometers or smaller: for the purpose of better preventing the pellicle frame from affecting the mask to deform.

Pellicle for lithography

The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

Sample electrification measurement method and charged particle beam apparatus

PROBLEM TO BE SOLVED: To make it possible to execute pattern formation by evading the defect points of a mask blank, to improve the yield of production and to enable the efficient utilization of the mask blank. SOLUTION: In the pattern formation method for forming the mask patterns on the mask blank by exposing the desired patterns to the main surface of the mask blank for formation of a mask for exposure and, position measurement marks are respectively previously formed at the corners of the opposite angle of the main surface of the mask blank and the defects 75 of the main surface of the mask blank are detected. The relative positions of the positions of the detected defects 75 and the mask patterns 73 to be formed on the mask blank are compared. The pattern positions are so selected that the defects 75 overlap on the patterns 73 and thereafter, the position measurement marks are measured and the exposure positions are calculated. The selected portions are subjected to exposure processing.

Formation of pattern and exposure device

PURPOSE:To provide an exposure half-tone type phase shift mask capable of preventing the fluctuation of the physical properties of a translucent film due to the irradiation of exposure light, and contributing to the improvement of pattern transfer accuracy. CONSTITUTION:Regarding the exposure half-tone type phase shift mask made of a SiN translucent film 102 formed on a transparent substrate to a desired pattern, the features are that light having wavelength included in the absorption band of the film 102 for exposure wavelength is radiated from the side of the substrate 101 to the film 102, thereby forming a stabilizing layer 103 at a boundary between the substrate 101 and the film 102 to prevent the physical property fluctuation of the film 102 due to the exposure light being radiated.

Exposure mask and manufacturing method and device therefor

PROBLEM TO BE SOLVED: To establish stable measurement having no risk of being influenced by charge-up at all measuring points. SOLUTION: This electron microscope is composed of a power supply 21 for controlling the acceleration voltage, an electron gun 1 to emit an electron beam 1' at the acceleration voltage set by the power supply 21, an electron optical system to scan the surface of a sample 11 with the emitted electron beam 1', a retarding circuit 12 connected with the sample 11 and applying a retarding electric field to the part near the surface of the sample 11, a potentiometer probe 9 to measure the surface potential of the sample 11, and a feedback calculation circuit 30 to make a feedback to the power supply 21 on the basis of the obtained surface potential and the preset surface potential. COPYRIGHT: (C)2001,JPO

Scanning electron microscope and micro-pattern measuring method

PURPOSE: To effectually prevent a pattern from being fallen in the case where a fine resist pattern and a resist pattern with a higher aspect ratio. CONSTITUTION: In a rinsing process upon resist patterns 2a, 2b being developed, a rinsing processing is effected using a rinsing solution 5 containing therein a surface active agent which is not left behind on a substrate by being volatilized when dried. COPYRIGHT: (C)1994,JPO&Japio

Resist pattern formation method

PROBLEM TO BE SOLVED: To minimize the reduction in a processing speed and to improve correction accuracy such as a proximity effect by performing an arbitrary number of multiple drawings for two times and changing drawing conditions between an arbitrary multiple drawing and another arbitrary multiple drawing. SOLUTION: On a first drawing, drawing data are transferred from a computer 38 for converting data to a control computer 37 and the control computer 37 divides a drawing region into small regions and creates a representative figure pattern from an original drawing pattern to obtain the radiation does according to a pattern position by using the same drawing data as the first drawing data. Then, on a second drawing, a representative figure pattern is used for creating an radiation dose table corresponding to each small region by using the representative figure pattern and the radiation dose table is sent to a buffer memory and a control circuit 26 on a third drawing and thereafter, thus performing a correction drawing and hence improving the correction accuracy of a proximity effect.

巌東川

Papers

Formation of pattern and exposure device

Exposure mask and manufacturing method and device therefor

Scanning electron microscope and micro-pattern measuring method

Resist pattern formation method

Pattern-drawing method and device

巌 東川

Papers

Formation of pattern and exposure device

Exposure mask and manufacturing method and device therefor

Scanning electron microscope and micro-pattern measuring method

Resist pattern formation method

Pattern-drawing method and device

巌東川