Recent experimental and theoretical data on modification of the atomic and electronic structures of the surface of different III–V semiconductors by electrolyte solutions are reviewed. The interrelation between chemical reactions occurring at semiconductor/electrolyte interfaces, the charge transfer between the semiconductor and the solution, and corresponding modifications of the atomic and electronic structures of the semiconductor surface is established. Examples of modification of the electronic characteristics and properties of semiconductor devices and nanostructures under interaction with electrolyte solutions are given.

Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review)

MOCVD growth of InAs/GaSb type-II superlattices on InAs substrates for short wavelength infrared detection

Silicon technologyhas been seekingfor a monolithic solution for a chip where data processing and data communication is performed in the CMOS part and the photonic component, respectively. Tradition ...

/pdf/engineering-multicomponent-nanostructures-for-mosfet-1yi0gugjai.pdf

Engineering Multicomponent Nanostructures for MOSFET, Photonic Detector and Hybrid Solar Cell Applications

The fluorine-atom profiles over the dielectric-layer thickness, as well as the electrophysical parameters of metal–insulator–semiconductor structures obtained when InAs crystals are anodically oxidized under galvanostatic conditions at two anodizing current densities in an electrolyte containing fluoride ions, are investigated. The features of variations both in the fluorine-atom distribution and in the effective surfacestate charge on the InAs–layer interface, which are observed during layer growth, are discussed.

Features of the Growth and Properties of Dielectric Layers and Metal−Insulator−Semiconductor Structures Obtained via the Anodic Oxidation of InAs in an Electrolyte Containing Fluorine Ions

Reduction of surface leakage current of InAs/GaSb long-wavelength superlattice detectors using SiO2 and anodic sulfide composite passivation

One of the major challenges of antimonide-based devices arises owing to the large number of surface states generated during fabrication processes. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of this material system. In this paper, we proposed a new passivation method (zinc sulfide coating after anodic fluoride) for InAs/GaSb superlattice infrared detectors. InAs/GaSb superlattice short-wavelength infrared materials were grown by molecular beam epitaxy on GaSb (100) substrates. A GaSb buffer layer, which can decrease the occurrence of defects with similar pyramidal structure, was grown for optimized superlattice growth condition. High resolution X-ray diffraction indicated that the period of the superlattice corresponding to fourth satellite peak was 39.77 A. The atomic force microscopy images show the roughness was below 1.7 nm. The result of photoresponse spectra shows that the cutoff wavelength was 3.05 μm at 300 K.

Yan Qiu Lv

Papers

Anodic fluoride passivation of type II InAs/GaSb superlattice for short-wavelength infrared detector