Journal ArticleDOI
Anodic fluoride passivation of type II InAs/GaSb superlattice for short-wavelength infrared detector
TLDR
In this paper, a new passivation method (zinc sulfide coating after anodic fluoride) was proposed for InAs/GaSb superlattice infrared detectors, which can decrease the occurrence of defects with similar pyramidal structure.Abstract:
One of the major challenges of antimonide-based devices arises owing to the large number of surface states generated during fabrication processes. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of this material system. In this paper, we proposed a new passivation method (zinc sulfide coating after anodic fluoride) for InAs/GaSb superlattice infrared detectors. InAs/GaSb superlattice short-wavelength infrared materials were grown by molecular beam epitaxy on GaSb (100) substrates. A GaSb buffer layer, which can decrease the occurrence of defects with similar pyramidal structure, was grown for optimized superlattice growth condition. High resolution X-ray diffraction indicated that the period of the superlattice corresponding to fourth satellite peak was 39.77 A. The atomic force microscopy images show the roughness was below 1.7 nm. The result of photoresponse spectra shows that the cutoff wavelength was 3.05 μm at 300 K.read more
Citations
More filters
Journal ArticleDOI
Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review)
TL;DR: In this paper, the authors reviewed experimental and theoretical data on modification of the atomic and electronic structures of the surface of different III-V semiconductors by electrolyte solutions and established the interrelation between chemical reactions occurring at semiconductor/electrolyte interfaces.
Journal ArticleDOI
MOCVD growth of InAs/GaSb type-II superlattices on InAs substrates for short wavelength infrared detection
Ying Chen,Jiafeng Liu,Yu Zhao,Yan Teng,Xiujun Hao,Xin Li,He Zhu,Hong Zhu,Qihua Wu,Yong Huang +9 more
TL;DR: In this article, the authors demonstrate InAs/GaSb type-II superlattice (SL) materials and photo detectors grown by metal-organic chemical vapor deposition for short wavelength infrared (SWIR) detection.
Engineering Multicomponent Nanostructures for MOSFET, Photonic Detector and Hybrid Solar Cell Applications
TL;DR: In this article, the authors propose a monolithic solution for a chip where data processing and data communication are performed in the CMOS part and the photonic component, respectively. But, their solution is not suitable for a large number of applications.
Journal ArticleDOI
Features of the Growth and Properties of Dielectric Layers and Metal−Insulator−Semiconductor Structures Obtained via the Anodic Oxidation of InAs in an Electrolyte Containing Fluorine Ions
TL;DR: In this article, the fluorine-atom profiles over the dielectric-layer thickness, as well as the electrophysical parameters of metal-insulator-semiconductor structures obtained when InAs crystals are anodically oxidized under galvanostatic conditions at two anodizing current densities in an electrolyte containing fluoride ions, are investigated.
Journal ArticleDOI
Reduction of surface leakage current of InAs/GaSb long-wavelength superlattice detectors using SiO2 and anodic sulfide composite passivation
TL;DR: In this paper , two passivation methods for long-wavelength infrared type-II InAs/GaSb superlattice (T2SL) photodiodes with the PπBN structure containing an InAs and AlSb hole barrier layer were investigated.
References
More filters
Journal ArticleDOI
Proposal for strained type II superlattice infrared detectors
TL;DR: In this article, it was shown that superlattices made of InAs−Ga1−xInxSb x∼0.4 have favorable optical properties for infrared detection.
Journal ArticleDOI
A new semiconductor superlattice
TL;DR: In this article, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role is treated theoretically, through the use of Bloch functions.
Journal ArticleDOI
The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review
TL;DR: In this article, a review of InAs/AlSb quantum wells is presented, which is an ideal medium to study the low-temperature transport properties in InAs itself, with gate-induced electron sheet concentrations on the order 10 12 cm −2, they exhibit a pronounced conductivity quantization.
Journal ArticleDOI
Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes
Aaron Gin,Yajun Wei,Andrew Hood,A. Bajowala,V. R. Yazdanpanah,Manijeh Razeghi,Meimei Z. Tidrow +6 more
TL;DR: In this paper, the surface passivation of Type-II InAs/GaSb superlattice photodetectors using various ammonium sulfide solutions was reported.
Journal ArticleDOI
Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate
Elena Plis,Jean-Baptiste Rodriguez,Ganesh Balakrishnan,Y.D. Sharma,Ha Sul Kim,Thomas J. Rotter,Sanjay Krishna +6 more
TL;DR: In this paper, a type-II InAs/GaSb SLS photodetector with interfacial misfit dislocation arrays was used to minimize threading dislocations in the active region.