Showing papers by "Yang Liu published in 2012"
TL;DR: In this article, the authors investigated the resistive switching behavior of partially anodized aluminum thin film at temperatures of 25 $ √ hbox{C}$ −250 $√ h box{C]$.
Abstract: Resistive switching behavior of partially anodized aluminum thin film has been investigated at temperatures of 25 $^{\circ}\hbox{C}$ –250 $^{\circ}\hbox{C}$ . Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with small activation energies. The pulse voltage experiment also suggests that the conductive filament breaking/reconnection is easier to occur at a higher temperature. Some possible mechanisms for the phenomena are discussed. On the other hand, at elevated temperatures without continuous electric field applied, while the high-resistance state exhibits no significant change with time, the low-resistance state (LRS) shows a continuous degradation, and there is a sudden failure. The LRS failure time shows Arrhenius dependence with an activation energy of $\sim$ 1.3 eV, suggesting that the LRS failure could be due to the migration of the excess Al atoms at high temperatures.
15 citations
TL;DR: In this paper, an analytical model for field-plate optimization in high electron mobility transistor (HEMT) is presented, with the potential distribution in device's channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively.
Abstract: An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.