Showing papers by "Yasuharu Suematsu published in 1993"

Room-temperature operation of GaInAs/GaInAsP/InP SCH lasers with quantum-wire size active region

Abstract: Improvements in the fabrication of GaInAs(P)/InP devices consisting of an ultrafine structure by using two-step organometallic vapor phase epitaxy (OMVPE) growth, electron beam exposure direct writing, and wet chemical etching are reported. This improved process achieved, for the first time, a room-temperature continuous-wave (CW) operation of GaInAs/InP quantum-wire lasers consisting of 5-nm-thick and 10-30-nm-wide vertically stacked triple quantum-wire active region within the period of 70 nm. A large blue shift of approximately 40 nm was observed in both the lasing and the electroluminescence spectra of Ga/sub 0.3/In/sub 0.7/As/InP compressively strained multi-quantum-well (MQW) wire lasers consisting of a 3-nm-thick and 30-60-nm-wide five-wire active region, which suggests a reduced effective mass of holes along the in-plane direction. >

Ga/sub 0.66/In/sub 0.34/As/GaInAsP/InP tensile-strained single-quantum-well lasers with 70-nm period wire active region

Abstract: Fairly low threshold current operation was achieved with Ga/sub 066/In/sub 034/As/GaInAsP/InP tensile-strained (TS) single-quantum-well (SQW) lasers with 30- approximately 40-nm-wide and 70-nm-period wire active region fabricated by a combination of a wet chemical etching and two-step OMVPE (organometallic vapor phase epitaxy) growth Threshold current as low as 16 mA and threshold current density of 816 A/cm/sup 2/ were obtained under a room temperature CW condition In comparing the spontaneous emission peak wavelength of the TS-SQW wire laser with that of the TS-SQW film laser, an approximately 10-meV blue shift of the fundamental energy level was observed in the TS-SQW wire laser >

Multi-dimensional quantum well device and its manufacture

Abstract: PURPOSE:To provide a multi-dimensional device, e.g. a quantum well fine wire device or a quantum box device which has very little dispersion in dimension and is capable of microminiaturization. CONSTITUTION:A large number of first material layers 12 and second material layers 13 are piled up alternately from the top of a substrate 11 to form a multilayered laminate 14, and a quantum well material is selectively grown on first layers 12 appearing on a vertical or an inclined cross section F on the laminate face to form quantum well fine wires 15. The width of this quantum well fine wire 15 is prescribed by the film thickness of the first layer 12, and its pitch by the film thickness of the second layer 13; therefore, the quantum well device has little dispersion in dimension and is capable of microminiaturization.