Showing papers by "Yasuharu Suematsu published in 1994"
Book•
01 Jan 1994
TL;DR: In this article, the authors present a theoretical analysis of semiconductor laser and photonic integrated circuits based on rate-equation analysis and light control and noise properties of laser diodes.
Abstract: Introduction. Fundamental lightwave devices. Semiconductor optical waveguides. Radiative and non-radiative recombination in semiconductor lasers. Fundamental theory of semiconductor lasers. Advanced theory of semiconductor lasers. Rate-equation analysis of semiconductor lasers. Direct modulation characteristics of semiconductor lasers. Light control and noise of semiconductor lasers. Fabry-Perot laser diodes. Integrated lasers. Dynamic-single-mode lasers. Photonic integrated circuits. Epitaxy of compounds. Fabrication process of semiconductor laser and photonic integrated circuits. Applications of semiconductor lasers.
108 citations
TL;DR: In this article, a Ga/sub 0.67/In/Sub 0.33/As/GaInAsP/InP quantum-box (QB) laser with single-layer tensile-strained active region is demonstrated for the first time.
Abstract: The lasing action of a Ga/sub 0.67/In/sub 0.33/As/GaInAsP/InP quantum-box (QB) laser with single-layer tensile-strained (TS)-QB active region is demonstrated for the first time. The fabricated QB is 30 nm in diameter and 12 nm thick with a period of 70 nm. The sample was fabricated by using two-step MOVPE growth, electron-beam-exposure (EBX) direct writing, and wet-chemical etching processes. The threshold current density was 7.6 KA/cm/sup 2/ at 77 K with pulse current injection.
66 citations