The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).

High density plasma deposition and etching apparatus

An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

An electro-optical device of the present invention includes pixel electrodes, TFTs electrically connected to the pixel electrodes, and scanning lines and data lines connected to the TFTs on a TFT array substrate. Each scanning line has a broad width portion as a gate electrode in a portion facing a channel area of the TFT and the narrow width portion. As a result, an electro-optical device capable of easily adjusting an arrangement of the gate electrodes and the scanning lines and at the same time precisely driving the TFTs is provided.

Electro-optical device and electronic apparatus

A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction. Another method utilizes a gas-dispersing showerhead that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface. The activated plasma gas radicals and ions utilized in the invention contribute energy to the surface reaction such that the film may be deposited at a substantially lower deposition temperature that is necessary for traditional thermal CVD techniques. Furthermore, the activation of these species reduces the temperature needed to complete the surface reaction. The method is particularly useful in depositing titanium-containing films at low temperatures.

Method for producing titanium thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor

An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

Electro-optical device

Infrared absorption spectra and compositions of evaporated silicon oxides (SiOx)

A display device such as a liquid crystal display device is provided which comprises a single substrate, a plurality of thin film semiconductor elements provided on the substrate, a plurality of display elements whose pixel display is controlled by the semiconductor elements, and electrodes for driving the display elements. The substrate includes a display zone having the thin film semiconductor elements arranged in the display elements as well as a non-display zone. The non-display zone has a display scan drive circuit area and a display signal drive circuit area. The thin film semiconductor elements are formed in the both zones. A distance between the display signal drive circuit area and the semiconductor elements of the display zone on the substrate is physically arranged so as be larger than a distance between the display scan drive circuit area and the semiconductor elements of the display zone. In the display device, the multiplicity of semiconductor elements are formed on a glass substrate having one side of several or more inches so that minimum processing dimensions of the semiconductor elements in the display zone are smaller than those in the non-display zone.

Display device, manufacturing method thereof and display panel

TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating mechanism. The substrate is fixed on the sample holder, then subjected to laser annealing while being heated from the glass substrate side, thereby growing polycrystalline silicon having substantially improved crystallinity, on which a-Si is further deposited. According to this process of the invention, it is capable of forming TFTs having a higher mobility and a smaller leakage current in the periphery of the substrate, with addition of almost no changes to the process and device structures of conventional TFTs which constitute pixels, and even more the peripheral drive circuitry is capable of being integrated in the display substrate.

Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device

There is disclosed a plasma operation apparatus which utilizes plasma generated by a microwave cooperative with a magnetic field so as to perform surface operation of a specimen (7, 101, 201) such as semiconductor substrates, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

Plasma operation apparatus

Inverse staggered polycrystalline silicon (poly-Si) and hydrogenated amorphous silicon (a-Si:H) double structure thin-film transistors (TFT's) are fabricated based on the conventional a-Si:H TFT process on a single glass substrate. After depositing a thin (20 nm) a-Si:H using the plasma CVD technique at 300/spl deg/C, Ar/sup +/ and XeCl (300 mJ/cm/sup 2/) lasers are irradiated successively, and then a thick a-Si:H (200 nm) and n/sup +/ Si layers are deposited again. The field effect mobilities of 10 and 0.5 cm /sup 2//V/spl middot/s are obtained for the laser annealed poly-Si and the a-Si:H (without annealing) TFT's, respectively.

Yasuhiro Mochizuki

Papers

Infrared absorption spectra and compositions of evaporated silicon oxides (SiOx)

Display device, manufacturing method thereof and display panel

Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device

Plasma operation apparatus

Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration