The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The one or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission of one or more first wavelengths. At least at least one of the light emitting diode devices comprise a quantum well region, which is characterized by an electron wave function and a hole wave function. In a specific embodiment, the electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. In a specific embodiment, the device has a thickness of one or more entities formed overlying the one or more light emitting diode devices. The one or more entities are excited by the substantially polarized emission and emitting electromagnetic radiation of one or more second wavelengths.

White light devices using non-polar or semipolar gallium containing materials and phosphors

The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as light source for illustrating images. In one set of embodiments, the present invention provides projector systems that utilize blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides projection systems having digital lighting processing engines illuminated by blue and/or green laser devices. In one embodiment, the present invention provides a 3D display system. There are other embodiments as well.

Laser based display method and system

A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission.

HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN

A vertical cavity surface emitting laser device includes a first reflective mirror layer, a second reflective mirror layer, and an active layer disposed therebetween, wherein at least one of the first reflective mirror layer and the second reflective mirror layer includes a periodic-refractive-index structure in which the refractive index periodically changes in the in-plane direction and a part of the periodic-refractive-index structure includes a plurality of parts that disorder the periodicity.

Vertical cavity surface emitting laser device

We demonstrate GaN-based distributed-feedback surface-emitting lasers grown on sapphire substrates with a two-dimensional (2D) square-lattice photonic crystal (PhC) that forms a high-aspect-ratio void array (void diameter: 65 nm and depth: 220 nm). The 2D PhC layer acts as both distributed-feedback grating and p-type optical cladding of a separate confinement heterostructure. To form the 2D PhC in the nitride semiconductor layers, we developed an embedding process that uses mass-transport phenomena. Crystallographic facets appeared on the inner walls of the embedded voids. Room-temperature lasing action was observed at 406.0 nm for a PhC lattice constant of 162.5 nm. The threshold current density was 9.7 kA/cm2 for a 120-μm-square p-contact electrode.

GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical cladding

A structure includes a photonic crystal layer including a first member having a high refractive index in which a plurality of holes are periodically arranged, and a second member having a low refractive index. A third member is disposed on the first member. The third member has a refractive index higher than 1.0 and lower than the refractive index of the first member. The holes of the photonic crystal layer have a depth in the range of 20% to 80% of the thickness of the first member.

Structure using photonic crystal and surface emitting laser

In a structure having a two-dimensional photonic crystal in which structures (1010) having different refractive indices are disposed at a two-dimensional period and comprising a structure emitting in a direction (1040) perpendicular to a resonance direction of light propagating in the in-plane direction of the two-dimensional photonic crsytal, wherein the structure comprises a one-dimensional photonic crystal (1030) in which components having different refractive indices are arranged at a one-dimensional period, and, the light propagating in the in-plane direction of the two-dimensional photonic crystal is reflected by a photonic band edge of the one-dimensional photonic crystal.

Structure having photonic crystal and surface-emitting laser

A structure includes a photonic crystal layer which has a first member having a first refractive index and having a surface with a plurality of holes periodically arranged therein, and includes a low-refractive-index layer adjacent to the photonic crystal layer and having a second refractive index that is lower than the first refractive index. The relative refractive index difference between the first refractive index and the second refractive index is 0.10 or lower. Third members having a third refractive index that is higher than 1.0 are disposed in the holes.

Yasuhiro Nagatomo

Papers

Vertical cavity surface emitting laser device

GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical cladding

Structure using photonic crystal and surface emitting laser

Structure having photonic crystal and surface-emitting laser

Photonic crystal structure and surface-emitting laser using the same