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Yasuhisa Naitoh
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 122
Citations - 2181
Yasuhisa Naitoh is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Electrode & Carbon nanotube. The author has an hindex of 22, co-authored 112 publications receiving 1921 citations. Previous affiliations of Yasuhisa Naitoh include Osaka University.
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Morphological change and mobility enhancement in PEDOT:PSS by adding co-solvents.
TL;DR: Adding ethylene glycol to a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solution improves the crystallinity of the PEDOT and the ordering of the H2O nanocrystals in solid films.
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Simple and Scalable Gel-Based Separation of Metallic and Semiconducting Carbon Nanotubes
Takeshi Tanaka,Hehua Jin,Yasumitsu Miyata,Shunjiro Fujii,Hiroshi Suga,Yasuhisa Naitoh,Takeo Minari,Tetsuhiko Miyadera,Kazuhito Tsukagoshi,Hiromichi Kataura +9 more
TL;DR: A rapid and scalable method for the separation of metallic and semiconducting single-wall carbon nanotubes (SWCNTs) is reported; the separation is performed by the selective adsorption of semiconductor SWC NTs on agarose gel.
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Recent Progress on PEDOT-Based Thermoelectric Materials
TL;DR: The thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT)-based materials have attracted attention recently because of their remarkable electrical conductivity, power factor, and figure of merit, and the potential applications of polymer thermoeLECTric generators are outlined.
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Polymer thermoelectric modules screen-printed on paper
TL;DR: In this paper, an organic thermoelectric module screen-printed on paper by using conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and silver paste was reported.
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Resistance switch employing a simple metal nanogap junction.
TL;DR: This work has reported the occurrence of reversible resistance switching effects in simple metal nanogap junctions, which exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the biases are reduced slowly.