The family of two-dimensional (2D) materials grows day by day, hugely expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals (vdW) heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member: 2D magnets. The situation has changed over the past 2 years with the introduction of a variety of atomically thin magnetic crystals. Here we will discuss the difference between magnetic states in 2D materials and in bulk crystals and present an overview of the 2D magnets that have been explored recently. We will focus on the case of the two most studied systems-semiconducting CrI3 and metallic Fe3GeTe2-and illustrate the physical phenomena that have been observed. Special attention will be given to the range of new van der Waals heterostructures that became possible with the appearance of 2D magnets, offering new perspectives in this rapidly expanding field.

Magnetic 2D materials and heterostructures.

The atomic thickness of two-dimensional materials provides a unique opportunity to control their electrical1 and optical2 properties as well as to drive the electronic phase transitions3 by electrostatic doping. The discovery of two-dimensional magnetic materials4–10 has opened up the prospect of the electrical control of magnetism and the realization of new functional devices11. A recent experiment based on the linear magneto-electric effect has demonstrated control of the magnetic order in bilayer CrI3 by electric fields12. However, this approach is limited to non-centrosymmetric materials11,13–16 magnetically biased near the antiferromagnet–ferromagnet transition. Here, we demonstrate control of the magnetic properties of both monolayer and bilayer CrI3 by electrostatic doping using CrI3–graphene vertical heterostructures. In monolayer CrI3, doping significantly modifies the saturation magnetization, coercive force and Curie temperature, showing strengthened/weakened magnetic order with hole/electron doping. Remarkably, in bilayer CrI3, the electron doping above ~2.5 × 1013 cm−2 induces a transition from an antiferromagnetic to a ferromagnetic ground state in the absence of a magnetic field. The result reveals a strongly doping-dependent interlayer exchange coupling, which enables robust switching of magnetization in bilayer CrI3 by small gate voltages. Electrostatic doping in vertical van der Waals CrI3–graphene heterostructures provides means to control the magnetic properties of monolayer and bilayer CrI3.

Controlling magnetism in 2D CrI 3 by electrostatic doping

This Review discusses recent advances towards electric-field control of magnetism in ferromagnetic semiconductors and metals, and in multiferroics. The electrical manipulation of magnetism and magnetic properties has been achieved across a number of different material systems. For example, applying an electric field to a ferromagnetic material through an insulator alters its charge-carrier population. In the case of thin films of ferromagnetic semiconductors, this change in carrier density in turn affects the magnetic exchange interaction and magnetic anisotropy; in ferromagnetic metals, it instead changes the Fermi level position at the interface that governs the magnetic anisotropy of the metal. In multiferroics, an applied electric field couples with the magnetization through electrical polarization. This Review summarizes the experimental progress made in the electrical manipulation of magnetization in such materials, discusses our current understanding of the mechanisms, and finally presents the future prospects of the field.

Control of magnetism by electric fields

The family of 2D materials grows day by day, drastically expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member - 2D magnets. The situation has changed over the last two years with the introduction of a variety of atomically-thin magnetic crystals. Here we will discuss the difference between magnetic states in 2D materials and in bulk crystals and present an overview of the 2D magnets that have been explored recently. We will focus, in particular, on the case of the two most studied systems - semiconducting CrI$_3$ and metallic Fe$_3$GeTe$_2$ - and illustrate the physical phenomena that have been observed. Special attention will be given to the range of novel van der Waals heterostructures that became possible with the appearance of 2D magnets, offering new perspectives in this rapidly expanding field.

Magnetic 2D materials and heterostructures

Multiferroics, compounds with both magnetic and ferroelectric orders, are believed to be a key material system to achieve cross-control between magnetism and electricity in a solid with minute energy dissipation. Such a colossal magnetoelectric (ME) effect has been an issue of keen interest for a long time in condensed matter physics as well as a most desired function in the emerging spin-related electronics. Here we begin with the basic mechanisms to realize multiferroicity or spin-driven ferroelectricity in magnetic materials, which have recently been clarified and proved both theoretically and experimentally. According to the proposed mechanisms, many families of multiferroics have been explored, found (re-discovered), and newly developed, realizing a variety of colossal ME controls. We overview versatile multiferroics from the viewpoints of their multiferroicity mechanisms and their fundamental ME characteristics on the basis of the recent advances in exploratory materials. One of the new directions in multiferroic science is the dynamical ME effect, namely the dynamical and/or fast cross-control between electric and magnetic dipoles in a solid. We argue here that the dynamics of multiferroic domain walls significantly contributes to the amplification of ME response, which has been revealed through the dielectric spectroscopy. Another related issue is the electric-dipole-active magnetic resonance, called electromagnons. The electromagnons can provide a new stage of ME optics via resonant coupling with the external electromagnetic wave (light). Finally, we give concluding remarks on multiferroics physics in the light of a broader perspective from the emergent electromagnetism in a solid as well as from the possible application toward future dissipationless electronics.

Multiferroics of spin origin

A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.

https://physics.aps.org/featured-article-pdf/10.1103/PhysRevLett.107.217202

Yh-H. Chu

Papers

Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure.