M
M. Gajek
Researcher at University of California, Berkeley
Publications - 26
Citations - 6501
M. Gajek is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Multiferroics & Ferroelectricity. The author has an hindex of 20, co-authored 26 publications receiving 5951 citations. Previous affiliations of M. Gajek include Centre national de la recherche scientifique & Institute of Cost and Management Accountants of Bangladesh.
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Journal ArticleDOI
Electric-field control of local ferromagnetism using a magnetoelectric multiferroic
Ying-Hao Chu,Lane W. Martin,Lane W. Martin,Mikel B. Holcomb,Mikel B. Holcomb,M. Gajek,Shu-Jen Han,Qing He,Nina Balke,Chan-Ho Yang,Donkoun Lee,Wei Hu,Qian Zhan,P. L. Yang,Arantxa Fraile-Rodríguez,Andreas Scholl,Shan X. Wang,Ramamoorthy Ramesh,Ramamoorthy Ramesh +18 more
TL;DR: A one-to-one mapping of the ferroelectric and ferromagnetic domains is discovered, mediated by the colinear coupling between the magnetization in the ferromagnet and the projection of the antiferromagnetic order in the multiferroic.
Journal ArticleDOI
Conduction at domain walls in oxide multiferroics
Jan Seidel,Lane W. Martin,Lane W. Martin,Qing He,Q. Zhan,Ying-Hao Chu,A. Rother,M. E. Hawkridge,Petro Maksymovych,Pu Yu,M. Gajek,Nina Balke,Sergei V. Kalinin,Sibylle Gemming,Feng Wang,Gustau Catalan,James F. Scott,Nicola A. Spaldin,Joseph Orenstein,Joseph Orenstein,Ramamoorthy Ramesh,Ramamoorthy Ramesh +21 more
TL;DR: The observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3) shows that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall.
Journal ArticleDOI
Tunnel junctions with multiferroic barriers
M. Gajek,M. Gajek,Manuel Bibes,Stéphane Fusil,Karim Bouzehouane,Josep Fontcuberta,Agnès Barthélémy,Albert Fert +7 more
TL;DR: This work shows that films of La (0.1)Bi(0.9)MnO(3) (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2 nm, and represents an advance over the original four-state memory concept based on multiferroics.
Journal ArticleDOI
Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films
Chan-Ho Yang,Jan Seidel,Jan Seidel,Sang-Yong Kim,P. B. Rossen,Pu Yu,M. Gajek,Ying-Hao Chu,Lane W. Martin,Lane W. Martin,Mikel B. Holcomb,Mikel B. Holcomb,Qing He,Petro Maksymovych,Nina Balke,Nina Balke,Sergei V. Kalinin,Arthur P. Baddorf,S. R. Basu,Matthew L. Scullin,Ramamoorthy Ramesh,Ramamoorthy Ramesh +21 more
TL;DR: The observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping opens the door to merging magnetoelectrics and Magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic Bi FeO3.
Journal ArticleDOI
Photoconductivity in BiFeO3 thin films
S. R. Basu,S. R. Basu,Lane W. Martin,Lane W. Martin,Ying-Hao Chu,M. Gajek,M. Gajek,Ramamoorthy Ramesh,Ramamoorthy Ramesh,Ram Rai,Ram Rai,Xiaoshan Xu,Janice L. Musfeldt +12 more
TL;DR: In this paper, the optical properties of epitaxial BiFeO3 thin films have been characterized in the visible range, showing an absorption onset near 2.17eV, a direct gap (2.667±0.005eV at 300K), and charge transfer excitations at higher energy.