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Yi-Chung Chen
Researcher at New York University
Publications - 14
Citations - 205
Yi-Chung Chen is an academic researcher from New York University. The author has contributed to research in topics: Field-programmable gate array & Resistive random-access memory. The author has an hindex of 8, co-authored 14 publications receiving 190 citations. Previous affiliations of Yi-Chung Chen include University of Pittsburgh & University of Manchester.
Papers
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Proceedings ArticleDOI
Non-volatile 3D stacking RRAM-based FPGA
TL;DR: A bit-addressable LUT is introduced with function of run-time programming memory cells of LUT, which is also known as Distributed Random Access Memory (D-RAM), and 62.7% of area reduction and 34% of delay improvement can be achieved compared to the conventional FPGA.
Journal ArticleDOI
The 3-D Stacking Bipolar RRAM for High Density
TL;DR: In this paper, two 3D stacking structures built upon bipolar RRAM crossbars are proposed to enable multilayer accesses while avoiding the overwriting induced by the cross-layer disturbance.
The 3D Stacking Bipolar RRAM for High Density
TL;DR: In this article, two 3D stacking structures built upon bipolar RRAM crossbars are proposed to enable multilayer accesses while avoiding the overwriting induced by the cross-layer disturbance.
Proceedings ArticleDOI
A Look Up Table design with 3D bipolar RRAMs
Yi-Chung Chen,Wei Zhang,Hai Li +2 more
TL;DR: Compared to the traditional SRAM-based FPGA, the RRAM-based LUT demonstrates advantages such as a eliminating initialization stage, a much higher density with 56% area reduction, a bit-addressable write scheme, dynamic reconfiguration, and better flexibility in supporting various configurations.
Proceedings ArticleDOI
3D-HIM: A 3D High-density Interleaved Memory for bipolar RRAM design
TL;DR: A 3D High-density Interleaved Memory (3D-HIM) design for bipolar RRAM, which can eliminate the need for forming isolation layers and further improve the density of the memory island, and a Bi-Group Operation Scheme for 3D-hIM to access multiple cells among multiple layers and to avoid unexpected overwriting is proposed.