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Yi-min Ding
Researcher at Peking University
Publications - 26
Citations - 507
Yi-min Ding is an academic researcher from Peking University. The author has contributed to research in topics: Band gap & Direct and indirect band gaps. The author has an hindex of 11, co-authored 26 publications receiving 378 citations.
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Journal ArticleDOI
Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.
Yi-min Ding,Jun-jie Shi,Congxin Xia,Min Zhang,Juan Du,Pu Huang,Meng Wu,Hui Wang,Yu-lang Cen,Shu-hang Pan +9 more
TL;DR: The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.
Journal ArticleDOI
Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect.
TL;DR: The strained few-layer InSe nanosheets are a promising candidate for future 2D electronic and optoelectronic nano-devices.
Journal ArticleDOI
K-Λ crossover transition in the conduction band of monolayer MoS2 under hydrostatic pressure.
Lei Fu,Yi Wan,Ning Tang,Yi-min Ding,Jing Gao,Jiachen Yu,Hongming Guan,Kun Zhang,Weiying Wang,Caifeng Zhang,Jun-jie Shi,Xiang Wu,Su-Fei Shi,Weikun Ge,Lun Dai,Bo Shen +15 more
TL;DR: The direct-to-indirect bandgap transition of monolayer MoS2 under hydrostatic pressure is experimentally demonstrated and it is confirmed that this transition is caused by the K-Λ crossover in the conduction band.
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Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect.
Pu Huang,Hua Zong,Jun-jie Shi,Min Zhang,Xin-he Jiang,Hongxia Zhong,Yi-min Ding,Ying-ping He,Jing Lu,Xiao-dong Hu +9 more
TL;DR: The physical origin of the strong emission line at 3.45 eV and broadening yellow luminescence (YL) band centered at 2.2 eV in GaN nanowire (NW) has been investigated by using state-of-theart first-principles calculations based on many-body perturbation theory combined with polarization-resolved experiments.
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Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g-C3N4, and g-CN: Electric Field Effect
TL;DR: In this paper, the gap opening of two-dimensional carbonitride materials with holes in their monolayers was investigated and the external electric field effect was also considered, and it was shown that the electric field can open band gaps and reduce the effective mass of electron and hole.