Yihu Li

Abstract: This paper discusses the design methodologies of a 340 GHz on-chip 3-D antenna. Firstly, a high-gain and high-radiation efficiency substrate integrated waveguide (SIW) cavity backed on-chip antenna is designed using a standard 0.13- $\mu{\hbox{m}}$ SiGe BiCMOS technology. Then, a low-permittivity supporter and a dielectric resonator (DR) are vertically stacked on the proposed on-chip antenna, forming a 3-D Yagi-like antenna to further enhance the gain and radiation efficiency. The measurements showed that the proposed antenna achieved a peak gain of ${\sim}$ 10 dBi and radiation efficiency of ${\sim}$ 80% at 340 GHz; the impedance bandwidth is ${\sim}$ 12% with the use of dielectric resonator antenna (DRA) and the Yagi-like structure. The antenna size is ${\sim} {\hbox{0.7}}\times {\hbox{0.7}}\ {\hbox{mm}}^{2}$ .

TL;DR: This paper presents a 320-GHz 1 ×4 fully integrated phased array transmitter using 0.13- μm SiGe BiCMOS technology aiming for terahertz wireless communication and is based on RF beam forming architecture.

TL;DR: This paper presents a stacked power amplifier for X-band multifunctional chips using 0.13-μm SiGe HBTs that achieves the highest output power at X- band with a silicon-based technology.

TL;DR: In this paper, a chip-to-waveguide-horn (CWH) antenna structure was proposed to improve silicon-based on-chip antenna gain at the D-band.

TL;DR: In this article, a sub-terahertz frequency doubler with signal modulation is proposed and analyzed, which achieves a power efficiency of 8.5% and a maximum output power of 4.5 dBm at 170 GHz without applying a modulation signal.