Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

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Silicon optical modulators

Overall water splitting based on particulate photocatalysts is an easily constructed and cost-effective technology for the conversion of abundant solar energy into clean and renewable hydrogen energy on a large scale. This promising technology can be achieved in a one-step excitation system using a single photocatalyst or via a Z-scheme process based on a pair of photocatalysts. Ideally, such photocatalysis will proceed with charge separation and transport unaffected by recombination and trapping, and surface catalytic processes will not involve undesirable reactions. This review summarizes the basics of overall water splitting via both one-step excitation and Z-scheme processes, with a focus on standard methods of determining photocatalytic performance. Various surface engineering strategies applied to photocatalysts, such as cocatalyst loading, surface morphology control, surface modification and surface phase junctions, have been developed to allow efficient one-step excitation overall water splitting. In addition, numerous visible-light-responsive photocatalysts have been successfully utilized as H2-evolution or O2-evolution photocatalysts in Z-scheme overall water splitting. Prototype particulate immobilization systems with photocatalytic performances comparable to or drastically higher than those of particle suspension systems suggest the exciting possibility of the large-scale production of low-cost renewable solar hydrogen.

Recent developments in heterogeneous photocatalysts for solar-driven overall water splitting

First-principles band theory, properly augmented by topological considerations, has provided a remarkably successful framework for predicting new classes of topological materials. This Colloquium discusses the underpinnings of the topological band theory and its materials applications.

Colloquium : Topological band theory

The conversion of sunlight into fuels and chemicals is an attractive prospect for the storage of renewable energy, and photoelectrocatalytic technologies represent a pathway by which solar fuels might be realized. However, there are numerous scientific challenges in developing these technologies. These include finding suitable materials for the absorption of incident photons, developing more efficient catalysts for both water splitting and the production of fuels, and understanding how interfaces between catalysts, photoabsorbers and electrolytes can be designed to minimize losses and resist degradation. In this Review, we highlight recent milestones in these areas and some key scientific challenges remaining between the current state of the art and a technology that can effectively convert sunlight into fuels and chemicals.

Materials for solar fuels and chemicals

Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.

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Lasing in direct-bandgap GeSn alloy grown on Si

http://ma.ecsdl.org/content/MA2012-02/43/3177.full.pdf

MBE Growth of GeSn and SiGeSn Heterojunctions for Photonic Devices

We demonstrate low voltage quantum-confined Stark effect electroabsorption in a Ge/SiGe quantum well diode with a new thin intrinsic layer design, showing the potential for absorptive modulators with low photocurrent dissipation power.

Low Power SiGe Electroabsorption Modulators for Optical Interconnects

Many novel and promising single-photon avalanche diodes (SPADs) emerged in recent years. However, some of them may demonstrate a very high dark count rate, even tens of megahertz, especially during the development phase or at room temperature, posing new challenges to device characterization. Gating operation with a width of 10 ns can be used to suppress the dark counts not coincident with the photon arriving time. However, as a side effect of the fast-gating operation, the gating response could be much higher than the avalanche signal and is usually removed by various circuit-based cancellation techniques. Here, we present an alternative method. A high-speed digital storage oscilloscope (DSO) is used to extract the weak avalanche signals from the large gating response background by waveform subtraction in software. Consequently, no complex circuit and precise tuning for each SPAD are needed. The avalanche detection threshold can be reduced to 5% of the full vertical scale of the DSO or 5 mV, whichever is greater. The timing resolution can be better than 2 ps for typical avalanche signals. Optical alignment and calibration are easy. The feasibility of on-wafer test with an RF probe station is discussed. All the advantages and features listed above make this method very useful in new SPAD research.

Improving characterization capabilities in new single-photon avalanche diode research.

We present the Ge/SiGe quantum well structure as a strong candidate for CMOS compatible light source. Photoluminescence and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk resonators.

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Light emission in Ge quantum wells

We demonstrate enhanced photoluminescence from Ge/SiGe quantum wells with strain from -0.28% (compressive) to 0.25% (tensile) achieved by epitaxial growth techniques. The intensity enhancement and peak shift from photoluminescence measurements are in agreement with theoretical calculations.

Yijie Huo

Papers

MBE Growth of GeSn and SiGeSn Heterojunctions for Photonic Devices

Low Power SiGe Electroabsorption Modulators for Optical Interconnects

Improving characterization capabilities in new single-photon avalanche diode research.

Light emission in Ge quantum wells

Enhanced photoluminescence from Ge/SiGe quantum wells by epitaxial growth induced strain