Metal halide perovskite materials are an emerging class of solution-processable semiconductors with considerable potential for use in optoelectronic devices1–3. For example, light-emitting diodes (LEDs) based on these materials could see application in flat-panel displays and solid-state lighting, owing to their potential to be made at low cost via facile solution processing, and could provide tunable colours and narrow emission line widths at high photoluminescence quantum yields4–8. However, the highest reported external quantum efficiencies of green- and red-light-emitting perovskite LEDs are around 14 per cent7,9 and 12 per cent8, respectively—still well behind the performance of organic LEDs10–12 and inorganic quantum dot LEDs13. Here we describe visible-light-emitting perovskite LEDs that surpass the quantum efficiency milestone of 20 per cent. This achievement stems from a new strategy for managing the compositional distribution in the device—an approach that simultaneously provides high luminescence and balanced charge injection. Specifically, we mixed a presynthesized CsPbBr3 perovskite with a MABr additive (where MA is CH3NH3), the differing solubilities of which yield sequential crystallization into a CsPbBr3/MABr quasi-core/shell structure. The MABr shell passivates the nonradiative defects that would otherwise be present in CsPbBr3 crystals, boosting the photoluminescence quantum efficiency, while the MABr capping layer enables balanced charge injection. The resulting 20.3 per cent external quantum efficiency represents a substantial step towards the practical application of perovskite LEDs in lighting and display. A strategy for managing the compositional distribution in metal halide perovskite light-emitting diodes enables them to surpass 20% external quantum efficiency—a step towards their practical application in lighting and displays.

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Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent

Novel quantum-dot light-emitting diodes based on all-inorganic perovskite CsPbX3 (X = Cl, Br, I) nanocrystals are reported. The well-dispersed, single-crystal quantum dots (QDs) exhibit high quantum yields, and tunable light emission wavelength. The demonstration of these novel perovskite QDs opens a new avenue toward designing optoelectronic devices, such as displays, photodetectors, solar cells, and lasers.

Quantum Dot Light-Emitting Diodes Based on Inorganic Perovskite Cesium Lead Halides (CsPbX3)

This Review article summarizes the key advantages of using quantum dots (QDs) as luminophores in light-emitting devices (LEDs) and outlines the operating mechanisms of four types of QD-LED. The key scientific and technological challenges facing QD-LED commercialization are identified, together with on-going strategies to overcome these challenges.

Emergence of colloidal quantum-dot light-emitting technologies

Solution-processed optoelectronic and electronic devices are attractive owing to the potential for low-cost fabrication of large-area devices and the compatibility with lightweight, flexible plastic substrates. Solution-processed light-emitting diodes (LEDs) using conjugated polymers or quantum dots as emitters have attracted great interest over the past two decades. However, the overall performance of solution-processed LEDs--including their efficiency, efficiency roll-off at high current densities, turn-on voltage and lifetime under operational conditions-remains inferior to that of the best vacuum-deposited organic LEDs. Here we report a solution-processed, multilayer quantum-dot-based LED with excellent performance and reproducibility. It exhibits colour-saturated deep-red emission, sub-bandgap turn-on at 1.7 volts, high external quantum efficiencies of up to 20.5 per cent, low efficiency roll-off (up to 15.1 per cent of the external quantum efficiency at 100 mA cm(-2)), and a long operational lifetime of more than 100,000 hours at 100 cd m(-2), making this device the best-performing solution-processed red LED so far, comparable to state-of-the-art vacuum-deposited organic LEDs. This optoelectronic performance is achieved by inserting an insulating layer between the quantum dot layer and the oxide electron-transport layer to optimize charge balance in the device and preserve the superior emissive properties of the quantum dots. We anticipate that our results will be a starting point for further research, leading to high-performance, all-solution-processed quantum-dot-based LEDs ideal for next-generation display and solid-state lighting technologies.

Solution-processed, high-performance light-emitting diodes based on quantum dots

Lead halide perovskite solar cells have recently attracted tremendous attention because of their excellent photovoltaic efficiencies. However, the poor stability of both the perovskite material and the charge transport layers has so far prevented the fabrication of devices that can withstand sustained operation under normal conditions. Here, we report a solution-processed lead halide perovskite solar cell that has p-type NiOx and n-type ZnO nanoparticles as hole and electron transport layers, respectively, and shows improved stability against water and oxygen degradation when compared with devices with organic charge transport layers. Our cells have a p–i–n structure (glass/indium tin oxide/NiOx/perovskite/ZnO/Al), in which the ZnO layer isolates the perovskite and Al layers, thus preventing degradation. After 60 days storage in air at room temperature, our all-metal-oxide devices retain about 90% of their original efficiency, unlike control devices made with organic transport layers, which undergo a complete degradation after just 5 days. The initial power conversion efficiency of our devices is 14.6 ± 1.5%, with an uncertified maximum value of 16.1%. Using metal oxides for both the hole- and electron-transport layers in perovskite solar cells significantly improves their stability compared with devices containing organic transport layers.

Improved air stability of perovskite solar cells via solution-processed metal oxide transport layers

Researchers demonstrate solution-processed light-emitting diodes based on a quantum-dot emissive layer between an organic hole-transport layer and an electron-transport layer of ZnO nanoparticles. The device achieves a luminance of 68,000 cd m−2 and power efficiencies of up to 8.2 lm W−1.

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Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures

Bright, efficient red, green and blue quantum-dot LEDs are realized by customizing the nanostructure of the quantum dots.

High-efficiency light-emitting devices based on quantum dots with tailored nanostructures

We have studied the effects of the hole transporting layers and electron transporting layers on the device efficiencies of iridium(III) bis[(4,6-di-fluorophenyl)-pyridinato-N,C2′] picolinate (FIrpic) doped 3,5′−N,N′-dicarbazole-benzene (mCP) host blue phosphorescent organic light emitting diodes. We found that the device efficiency is very sensitive to the hole transporting materials used and both the triplet energy and carrier transport properties affect the device efficiency. On the other hand, there is no apparent correlation between the device efficiency and the triplet energy of the electron transporting material used. Instead, the device efficiency is affected by the electron mobility of the electron transporting layer only.

Effects of triplet energies and transporting properties of carrier transporting materials on blue phosphorescent organic light emitting devices

Electroluminescence from light-emitting polymer/ZnO nanoparticle heterojunctions at sub-bandgap voltages

We have demonstrated a substantial enhancement in the efficiency of iridium (III) bis[(4,6-di-fluorophenyl)-pyridinate-N,C2′]picolinate based blue phosphorescent organic light-emitting devices (PHOLEDs). The efficiencies of PHOLEDs with conventional electron transport materials are low due to their low electron mobilities as well low triplet energies. High triplet energy electron transporting material with high electron mobility was used as a hole blocker to achieve efficient exciton confinement and good charge balance in the device thereby achieving a high current efficiency of 49cd∕A and an external quantum efficiency of 23%.

Ying Zheng

Papers

Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures

High-efficiency light-emitting devices based on quantum dots with tailored nanostructures

Effects of triplet energies and transporting properties of carrier transporting materials on blue phosphorescent organic light emitting devices

Electroluminescence from light-emitting polymer/ZnO nanoparticle heterojunctions at sub-bandgap voltages

High efficiency blue phosphorescent organic light-emitting device