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Yong Chun Kim
Researcher at Samsung
Publications - 14
Citations - 615
Yong Chun Kim is an academic researcher from Samsung. The author has contributed to research in topics: Light-emitting diode & Layer (electronics). The author has an hindex of 9, co-authored 14 publications receiving 594 citations. Previous affiliations of Yong Chun Kim include Samsung Electro-Mechanics.
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Journal ArticleDOI
Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes
Sang-Heon Han,Dong-Yul Lee,Sang-Jun Lee,Chu-Young Cho,Min-Ki Kwon,Song-Jae Lee,Do Young Noh,Dong-Joon Kim,Yong Chun Kim,Seong-Ju Park +9 more
TL;DR: In this article, the effect of an electron blocking layer (EBL) on the efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) is investigated.
Journal ArticleDOI
Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal
Min-Ki Kwon,Ja-Yeon Kim,Il-Kyu Park,Ki Seok Kim,Gun Young Jung,Seong-Ju Park,Je Won Kim,Yong Chun Kim +7 more
TL;DR: A photonic crystal structure of periodic SiO2 pillar cubic array is embedded in n-GaN layer of InGaN∕GaN multiple quantum well (MQW) blue (480nm) light-emitting diode (LED).
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Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer
Tae-Young Park,Yongseok Choi,Jang-Won Kang,Jae-Ho Jeong,Seong-Ju Park,Dong Min Jeon,Je Won Kim,Yong Chun Kim +7 more
TL;DR: The forward voltage of LEDs with Ga-doped ZnO:Ga films was 3.3 V at 20 mA as discussed by the authors, which was attributed to the removal of a resistive ZnGa2O4 phase, decreased resistivity, and increased hole concentration in p-GaN by thermal annealing process.
Journal ArticleDOI
Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes
Sang-Heon Han,Chu-Young Cho,Sang-Jun Lee,Tae-Young Park,Tae-Hun Kim,Seung Hyun Park,Sang Won Kang,Je Won Kim,Yong Chun Kim,Seong-Ju Park +9 more
TL;DR: In this article, the effect of Mg doping in barrier layers of InGaN/GaN multiple quantum wells (MQWs) and its effect on the properties of light-emitting diodes (LEDs) was investigated.
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Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
Chu-Young Cho,Jin-Bock Lee,Sang-Jun Lee,Sang-Heon Han,Tae-Young Park,Je Won Kim,Yong Chun Kim,Seong-Ju Park +7 more
TL;DR: The improvement of light output power of InGaN/GaN blue light-emitting diodes by lateral epitaxial overgrowth (LEO) of GaN using a pyramidal-shaped SiO(2) mask is reported on.