The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

This Review focuses on recent developments in the use of ZnO nanostructures for dye-sensitized solar cell (DSC) applications. It is shown that carefully designed and fabricated nanostructured ZnO films are advantageous for use as a DSC photoelectrode as they offer larger surface areas than bulk film material, direct electron pathways, or effective light-scattering centers, and, when combined with TiO2, produce a core–shell structure that reduces the combination rate. The limitations of ZnO-based DSCs are also discussed and several possible methods are proposed so as to expand the knowledge of ZnO to TiO2, motivating further improvement in the power-conversion efficiency of DSCs.

https://depts.washington.edu/solgel/documents/pub_docs/journal_docs/2009/advanced_material2009.pdf

ZnO Nanostructures for Dye-Sensitized Solar Cells

Over the past decade, advances in LEDs have enabled the potential for wide-scale replacement of traditional lighting with solid-state light sources. If LED performance targets are realized, solid-state lighting will provide significant energy savings, important environmental benefits, and dramatically new ways to utilize and control light. In this paper, we review LED performance targets that are needed to achieve these benefits and highlight some of the remaining technical challenges. We describe recent advances in LED materials and novel device concepts that show promise for realizing the full potential of LED-based white lighting.

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

Wearable electronics is expected to be one of the most active research areas in the next decade; therefore, nanomaterials possessing high carrier mobility, optical transparency, mechanical robustness and flexibility, lightweight, and environmental stability will be in immense demand. Graphene is one of the nanomaterials that fulfill all these requirements, along with other inherently unique properties and convenience to fabricate into different morphological nanostructures, from atomically thin single layers to nanoribbons. Graphene-based materials have also been investigated in sensor technologies, from chemical sensing to detection of cancer biomarkers. The progress of graphene-based flexible gas and chemical sensors in terms of material preparation, sensor fabrication, and their performance are reviewed here. The article provides a brief introduction to graphene-based materials and their potential applications in flexible and stretchable wearable electronic devices. The role of graphene in fabricating ...

Flexible Graphene-Based Wearable Gas and Chemical Sensors

The application of liquid-exfoliated 2D transition metal disulfides (TMDs) as the hole transport layers (HTLs) in nonfullerene-based organic solar cells is reported. It is shown that solution processing of few-layer WS2 or MoS2 suspensions directly onto transparent indium tin oxide (ITO) electrodes changes their work function without the need for any further treatment. HTLs comprising WS2 are found to exhibit higher uniformity on ITO than those of MoS2 and consistently yield solar cells with superior power conversion efficiency (PCE), improved fill factor (FF), enhanced short-circuit current (JSC ), and lower series resistance than devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and MoS2 . Cells based on the ternary bulk-heterojunction PBDB-T-2F:Y6:PC71 BM with WS2 as the HTL exhibit the highest PCE of 17%, with an FF of 78%, open-circuit voltage of 0.84 V, and a JSC of 26 mA cm-2 . Analysis of the cells' optical and carrier recombination characteristics indicates that the enhanced performance is most likely attributed to a combination of favorable photonic structure and reduced bimolecular recombination losses in WS2 -based cells. The achieved PCE is the highest reported to date for organic solar cells comprised of 2D charge transport interlayers and highlights the potential of TMDs as inexpensive HTLs for high-efficiency organic photovoltaics.

/pdf/17-efficient-organic-solar-cells-based-on-liquid-exfoliated-534c53fqc3.pdf

17% Efficient Organic Solar Cells Based on Liquid Exfoliated WS2 as a Replacement for PEDOT:PSS

Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS2) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS2 atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS2 atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS2 FETs by integrating high-κ dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS2 device structures. The photoluminescence (PL) of MoS2 atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS2 transistors. The review discusses the overall recent progress made in developing MoS2 based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs.

Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics

Transition metal dichalcogenides (TMDs) are becoming significant because of their interesting semiconducting and photonic properties. In particular, TMDs such as molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), tungsten disulfide (WS2), tungsten diselenide (WSe2), titanium disulfide (TiS2), tantalum sulfide (TaS2), and niobium selenide (NbSe2) are increasingly attracting attention for their applications in solar cell devices. In this review, we give a brief introduction to TMDs with a focus on MoS2; and thereafter, emphasize the role of atomically thin MoS2 layers in fabricating solar cell devices, including bulk-heterojunction, organic, and perovskites-based solar cells. Layered MoS2 has been used as the hole-transport layer (HTL), electron-transport layer (ETL), interfacial layer, and protective layer in fabricating heterojunction solar cells. The trilayer graphene/MoS2/n-Si solar cell devices exhibit a power-conversion efficiency of 11.1%. The effects of plasma and chemical doping on the pho...

Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells.

Dye-sensitized solar cells (DSSCs) are gaining considerable interest as alternatives to semiconductor-based thin film solar cells The noble metal platinum (Pt) is conventionally used as a counter electrode (CE) material for fabricating DSSCs, since Pt is expensive and scarce, therefore, new materials have been explored to develop cost-effective Pt-free counter electrodes Two-dimensional (2D) graphene-based counter electrodes have achieved the highest power conversion efficiency (PCE, η) of 13%, which has stimulated research activities in 2D layered transition metal dichalcogenides (TMDs) for developing Pt-free DSSCs In this review, progress made on alternative counter electrodes for fabricating low-cost Pt-free DSSCs, based on earth-abundant 2D TMDs including MoS2, WS2, TiS2, FeS2, CoS2, NiS2, SnS2, MoSe2, NbSe2, TaSe2, NiSe2, FeSe2, CoSe2, Bi2Se3 and their based composites, are discussed and summarized Also, the considerable progress made on thin films of MoS2 and MoS2 based carbon, graphene, carbon nanotubes (CNTs), carbon nanofibers (CNFs), and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) composites as efficient counter electrodes (CEs) for DSSCs are discussed, in terms of their electrochemical and photovoltaic properties At present, PCE values higher than that of standard Pt CE have been recorded for a number of TMD-based CEs, which include MoS2 and MoSe2/thin films deposited on Mo foil, MoS2/CNTs, MoS2/graphene, MoS2/carbon, MoSe2/PEDOT:PSS, NbSe2, FeS2, FeSe2 nanosheets, TiS2/graphene, and NiS2/graphene hybrid systems in DSSCs, for the reduction of triiodide (I3−) to iodide (I−) The highest PCE (η = 1046%) versus Pt CE (η = 825%) at 1 Sun (100 mW cm−2, AM 15G) was measured for DSSCs having a low cost and flexible CoSe2/carbon-nanoclimbing wall counter electrode deposited on a nickel foam Though TMD-based materials show great potential for solar cell devices, their long-term stability is equally important The DSSCs with a TiS2/graphene hybrid, and TiS2/PEDOT:PSS composite CEs, showed stability up to 20 to 30 days, respectively, without any measurable degradation in the photovoltaic performance The long-term stability of TMDs-based DSSCs under different environmental conditions is also described in view of their commercial applications

/pdf/two-dimensional-transition-metal-dichalcogenide-based-2gaeg8g6md.pdf

Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells

A photonic crystal (PC) structure of periodic SiO2 pillar cubic array is embedded in n-GaN layer of InGaN∕GaN multiple quantum well (MQW) blue (480nm) light-emitting diode (LED). The diameter, period, and depth of SiO2 pillar are 124±6, 230±10, and 130±10nm, respectively. The increments of 70% for external quantum efficiency, 17% for internal quantum efficiency, and 45% for light extraction efficiency from photoluminescence measurement, and 33% for optical output power at 20mA are observed for LEDs with an embedded PC layer. This improvement can be attributed to the increased extraction efficiency by PC effect as well as increased internal quantum efficiency due to the decrease of dislocation density in n-GaN layer because of an epitaxial lateral over-growth process.

Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal

Among the layered transition metal dichalcogenides (TMDs) that can form stable two-dimensional crystal structures, molybdenum disulfide (MoS2) has been intensively investigated because of its unique properties in various electronic and optoelectronic applications with different band gap energies from 1.29 to 1.9 eV as the number of layers decreases. To control the MoS2 layers, atomic layer etching (ALE) (which is a cyclic etching consisting of a radical-adsorption step such as Cl adsorption and a reacted-compound-desorption step via a low-energy Ar+-ion exposure) can be a highly effective technique to avoid inducing damage and contamination that occur during the reactive steps. Whereas graphene is composed of one-atom-thick layers, MoS2 is composed of three-atom-thick S(top)—Mo(mid)—S(bottom) layers; therefore, the ALE mechanisms of the two structures are significantly different. In this study, for MoS2 ALE, the Cl radical is used as the adsorption species and a low-energy Ar+ ion is used as the desorptio...

Ki Seok Kim

Papers

Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics

Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells.

Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells

Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal

Atomic Layer Etching Mechanism of MoS2 for Nanodevices