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Yong Wu

Researcher at China Academy of Engineering Physics

Publications -  4
Citations -  4

Yong Wu is an academic researcher from China Academy of Engineering Physics. The author has contributed to research in topics: Outgassing & L band. The author has an hindex of 1, co-authored 2 publications receiving 3 citations.

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Journal ArticleDOI

Investigation of a metallic photonic crystal high power microwave mode converter

TL;DR: In this article, an L band metallic photonic crystal TEM-TE11 mode converter is proposed for narrow band high power microwave application, where the mode converter was realized by partially filling metal photonic crystals along azimuthal direction in a coaxial transmission line for phase shifting.

Simulation of Pulse Sharpening Mechanism of Vertical Diamond Avalanche Diode

TL;DR: In this article , the static and transient characteristics of diamond avalanche diodes (DADs) via 2-D device simulation were investigated, and the behavior and mechanism of the sharpened rising pulse response waveform were analyzed phase by phase.
Proceedings ArticleDOI

Experimental research on magnetically insulated transmission line oscillator with metal array cathode

TL;DR: In this article, an L-band MILO with metal array cathode was tested on a single shot low-impeded pulse power system and the performance of the tube was evaluated on both input pulse and output microwave.

Numerical Investigation of Laterally Downscaled Hydrogen-Terminated Diamond FETs

Abstract: Hydrogen-terminated diamond (H-diamond) field-effect transistors (FETs) have been the mainstream structure of diamond microwave devices. In this article, the direct current performance and cutoff frequency ( ${f}_{T}$ ) of H-diamond FETs with the gate length ( ${L}_{G}$ ) downscaling from $2 ~\mu \text{m}$ to 50 nm are investigated by 2-D device simulation. For our central-gated device with a 6-nm-thick Al2O3 gate dielectric, the transition point of ${L}_{G}$ from the long-channel behavior to the short-channel one is found to be about 200 nm. Though notable short-channel effects appear for ${L}_{G} \le {200}$ nm such as the negative shift of the threshold voltage and the increase of the drain-induced barrier lowering, the knee voltage at a given gate voltage stays almost constant for all the considered gate length range, which is unfavorable for a small-size device with lower operating voltage. It is found the effective velocity in the channel of short-channel H-diamond FETs at the drain voltage of 7 V is less than half of the saturation velocity. The ${f}_{T}$ versus ${V}_{\text {GS}}$ relation is quite different in the short channel case and long channel case, and it is analyzed in comparison with the ${g}_{m}$ versus ${V}_{\text {GS}}$ relation.