Yoon-Jong Song

TL;DR: In this article, a high-density 64Mbit PRAM was successfully fabricated using N-doped Ge/sub 2/Sb/Sub 2/Te/sub 5/ (GST) and optimal GST etching process, achieving low writing current of 0.6 mA and clear separation between SET and RESET resistance distributions.

TL;DR: In this paper, a ring-shaped contact structure was proposed to improve the contact area distribution even at the smallest contact diameter of 50nm node and the validity of this approach was directly confirmed by the evaluation of the functionality for the fabricated 256Mbit PRAM based on 0.10/spl mu/m CMOS technology.

TL;DR: In this article, a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase changeable material patterns was proposed. But the pattern was not shown to be effective in phase change memory devices.

TL;DR: In this article, a two-bit cell operation in diode-switch phase change memory cells with 90 nm technology is reported, which is highly write endurable and immune to write disturbance above 108 cycles, respectively.

TL;DR: In this article, an advanced ring type and encapsulating scheme was developed to fabricate highly manufacturable and reliable 256Mb PRAM, in which core dielectrics were optimized for cell contact CMP process and relatively high set resistance was stabilized from encapsulating Ge2Sb2Te5 (GST) stack with blocking layers.