An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Disclosed is a hybrid integrated circuit device provided with an active filter. The active filter is constructed mainly from a rectifier circuit, a reactor with one terminal connected with an output terminal of the rectifier, a switching element connected with one terminal of the reactor and a smoothing condenser connected with the other terminal of the reactor. The active filter is mounted on an insulating metal substrate and has, other than the above feature, a specific circuit structure wherein the substrate is divided by a ground pattern or power supply pattern into two blocks. One block is for a large current circuit such as the rectifier circuit, the switching element, and a diode and another block for a small signal circuit such as a control circuit. The hybrid integrated circuit device is of remarkably compact size. Also, it is greatly superior in a noise performance because switching noise does not flow into the chassis of electronic equipment from the metal substrate and the control circuit is shielded from the noise produced by the large current circuit, and also because the noise caused by wiring inductance can be limited.

Hybrid integrated circuit device

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

We provide a system for issuing identification documents to a plurality of individuals, comprising a first database, a first server, and a workstation. The first database stores a plurality of digitized images, each digitized image comprising a biometric image of an individual seeking an identification document. The first server is in operable communication with the first database and is programmed to send, at a predetermined time, one or more digitized images from the first database to a biometric recognition system, the biometric recognition system in operable communication with a second database, the second database containing biometric templates associated with individuals whose images have been previously captured, and to receive from the biometric recognition system, for each digitized image sent, an indicator, based on the biometric searching of the second database, as to whether the second database contains any images of individuals who may at least partially resemble the digitized image that was sent. The a workstation is in operable communication with the first server and is configured to permit a user to review the indicator and to make a determination as to whether the individual is authorized to be issued an identification document or to keep an identification document in the individual's possession.

Systems and methods for managing and detecting fraud in image databases used with identification documents

A contact-free card and a method for the manufacture of such a card. The card comprises a card body, an electronic module having an integrated chip card and two contact zones, and an antenna connected to the contact zones of said module by two contact terminals, wherein said module furthermore has contact pads connected to said chip for a contact-using operation of said card. Said method has a step according to which a layer of the card body is negative-molded on the antenna and a cavity is made in the card body, revealing said contact terminals of the antenna, followed by a step according to which the electronic module is mounted in the cavity of the card body. The invention can be applied to the manufacture of contact-free cards, which may or may not be combined and designed, for example, for remote cash type of operations.

Hybrid chip card capable of both contact and contact-free operation and having antenna contacts situated in a cavity for an electronic module

Electroless nickel plating and gold plating is performed on an aluminum electrode in order to construct a highly reliable electrode. The steps are: depositing zinc on the aluminum electrode with zincate treatment liquid containing sodium hydroxide and zinc oxide; immersing it in solution which is prepared by dissolving sodium hypophosphite as a reducing agent into de-ionized water, followed by addition of de-ionized water while adjusting for the pH of 9.0 to 12.0 with sodium hydroxide solution, so as to make a total volume of 1000 ml; nickel-plating the aluminum electrode of the semiconductor device by using electroless nickel plating solution of oxidation-reduction reacting type containing sulfur compound as a reaction promoter, under a condition of the pH at 4.0 to 6.8 and a temperature of 80 to 90° C.; electroless gold-plating by substitutional reaction type; and, electroless gold-plating by oxidation-reduction reacting type, so as to form a nickel film containing phosphor and gold plated films on all aluminum electrodes of the semiconductor device. In this way, a nickel plate film of good electrical conductivity and also a gold plate of a thick film on all aluminum electrodes of the semiconductor device are formed, without resulting in corrosion of the passivation film and the aluminum electrodes.

Method of forming electric pad of semiconductor device and method of forming solder bump

PROBLEM TO BE SOLVED: To provide an electronic component package and its manufacturing method for realizing a shield effect sufficient for miniaturizing an electronic apparatus, reducing its height, reducing its weight and increasing frequency, according to the improvement in the sealing properties of the electronic component package. SOLUTION: The electronic component package is composed of a circuit board 1 having a ground pattern 3, a packaging component 5 composed of an electronic component packaged on an upper surface of the circuit board 1, a seal 6 composed of epoxy resin containing an inorganic filler for sealing the packaging component 5, and a shielding layer, composed of an electroless copper plating layer as a first layer 7 to be formed on the surface of the seal 6, an electrolytic copper plating layer as a second layer 8 and a coating layer for preventing copper oxidation as a third layer 9, and is configured by grounding the shield layer on the ground pattern 3. COPYRIGHT: (C)2005,JPO&NCIPI

Electronic component package and its manufacturing method

In an IC card of the invention, an IC module (3) is adhered to a first concave (9) of a card base (1) by means of an adhesive (7) and a gap (8) is formed between the outside surface of the IC module (3) and the inside surface of the first concave (9), the gap being wider in the inside upper part and narrower in the inside lower part of the first concave (9), so that the IC chip in the IC module (3) and the card base (1) can be protected from damages caused by bending of the the card base (1).

IC card and a method for the manufacture of the same

PURPOSE: To prevent the displacement of an electrode and the occurrence of a thin burr on a terminal face by a method wherein the projecting electrode is provided on the surface of a support part, an integrated circuit element is bonded on the electrode and sealed with resin and then the reverse side of the support part is removed until the electrode is exposed. CONSTITUTION: One surface of an iron metal thin plate is half-etched and thereby a lead frame 1 provided with a projecting electrode 1a and a flat-plate-shaped electrode support part 1b is prepared. Next, an insulative bonding agent 3 is applied to a prescribed position on the electrode 1a, an integrated circuit element 2 is mounted by die-bonding and the prescribed electrode 1a and an input-output terminal of the integrated circuit element 2 are connected by a gold slender wire 4. In succession, the other surface 1e of the support part 1b is brought into contact with a bottom tool of a transfer mold and epoxy sealing resin 5 is injected to seal up the integrated circuit element 2, the gold slender wire 4, etc., with the resin. Thereafter the other surface 1e of the support part 1b is ground by a surface grinding machine, the electrode support part 1b is removed thereby and the electrode 1a is separated and exposed, so that a terminal face 1x for external connection by prepared. By this method, the displacement of the electrode and the occurrence of thin burrs are prevented. COPYRIGHT: (C)1990,JPO&Japio

Manufacture of integrated circuit device

PROBLEM TO BE SOLVED: To provide electroless nickel plating and gold plating methods on an aluminum electrode for forming a highly reliable electrode. SOLUTION: Zinc is deposited 14 on the aluminum electrode 12 with zincate treating liquid containing sodium hydroxide and zinc oxide. Then, sodium hypophosphite being a reducing agent is dissolved in pure water. Pure water is added while it is adjusted to pH 9.0-12.0 with sodium hydroxide solution and it is immersed into solution 15 which is set to be 1000 mL in total. Then, nickel plating is executed with the condition of pH 4.0-6.8 at 80-90°C by using oxidation-reduction reaction electroless nickel plating liquid containing sulfur compound with the aluminum electrode 12 of the semiconductor element as reaction accelerator. Thus, a nickel film 16 containing phosphorus and gold plating films 17 and 18 are obtained in all the aluminum electrodes 12 of the semiconductor element by executing substitution reaction electroless gold plating and oxidation reduction-type electroless plating. COPYRIGHT: (C)1999,JPO

Yoshihisa Takase

Papers

Method of forming electric pad of semiconductor device and method of forming solder bump

Electronic component package and its manufacturing method

IC card and a method for the manufacture of the same

Manufacture of integrated circuit device

Method for forming electrode of semiconductor element