Patent
Method of forming electric pad of semiconductor device and method of forming solder bump
Yoshihisa Takase,Naoki Okazaki +1 more
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TLDR
In this paper, an electroless nickel plating solution of oxidation-reduction reacting type containing sulfur compound as a reaction promoter was used to form a nickel film containing phosphor and gold plated films on all aluminum electrodes of the semiconductor device.Abstract:
Electroless nickel plating and gold plating is performed on an aluminum electrode in order to construct a highly reliable electrode. The steps are: depositing zinc on the aluminum electrode with zincate treatment liquid containing sodium hydroxide and zinc oxide; immersing it in solution which is prepared by dissolving sodium hypophosphite as a reducing agent into de-ionized water, followed by addition of de-ionized water while adjusting for the pH of 9.0 to 12.0 with sodium hydroxide solution, so as to make a total volume of 1000 ml; nickel-plating the aluminum electrode of the semiconductor device by using electroless nickel plating solution of oxidation-reduction reacting type containing sulfur compound as a reaction promoter, under a condition of the pH at 4.0 to 6.8 and a temperature of 80 to 90° C.; electroless gold-plating by substitutional reaction type; and, electroless gold-plating by oxidation-reduction reacting type, so as to form a nickel film containing phosphor and gold plated films on all aluminum electrodes of the semiconductor device. In this way, a nickel plate film of good electrical conductivity and also a gold plate of a thick film on all aluminum electrodes of the semiconductor device are formed, without resulting in corrosion of the passivation film and the aluminum electrodes.read more
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Patent
Method for dual-layer polyimide processing on bumping technology
TL;DR: In this paper, a patterned negative photoresist partially overlays the aluminum contact pad and prevents contact between the layer of polyamide insulator and the surface of the contact pad.
Patent
Manufacturing method of semiconductor device
Yamaji Yasuhiro,Hosomi Eiichi +1 more
TL;DR: In this paper, an electrode pad is formed on a surface of a semiconductor substrate, except for on the electrode pad an insulating protective film is formed, and a covering layer of curable resin having a hole exposing at least a part of the layer of barrier metal is formed.
Patent
Activation plate for electroless and immersion plating of integrated circuits
Timothy B. Dean,William H. Lytle +1 more
TL;DR: In this paper, an integrated circuit with a plurality of bond pads comprising a bond-pad metal was shown to be plated using an activation plate, and the activation plate also included the bondpad metal.
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Chip scale package having flip chip interconnect on die paddle
TL;DR: A flip chip lead frame package includes a die and a lead frame having a die paddle and leads, and has interconnection between the active site of the die and the die paddle as discussed by the authors.
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Method of making semiconductor device
TL;DR: In this paper, a method of making a semiconductor device includes a resin film forming step for forming a resinear film on a polysilicon substrate with electrode portions to cover the electrode portions and a loading step for loading a bump material in the openings.
References
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Patent
Interconnect system and method of fabrication
TL;DR: In this paper, an interconnect system has a first substrate (10), a standoff (20), intended for subsequent reflow attachment, that covers a first end of the standoff and does not cover the sides of the tabletop.
Patent
Manufacture of semiconductor device
TL;DR: In this paper, the authors proposed to improve the high frequency properties and DC breakdown strength of a transistor by removing an insulating layer from between the recess part of a semiconductor layer and a gate electrode and not burying insulating substance between them.
Patent
Selective etching of TiW for C4 fabrication
TL;DR: In this paper, a chemical etchant for removing thin films of titanium-tungsten alloy in microelectronic chip fabrication is described, and a method for forming the etchant is disclosed.
Patent
Forming method for bump
TL;DR: In this article, the surface of an Al electrode for a semiconductor element, from which the greater part of the Al electrode 12 is exposed, is pretreated by the diluted solution of nitric acid (or phosphoric acid) and washed.
Patent
Method for nickel plating onto aluminum electrode
TL;DR: In this paper, a method for electroless nickel plating onto an aluminum electrode required for formation of a highly reliable electrode is presented. But the method is not suitable for high voltage applications.
Related Papers (5)
Activation plate for electroless and immersion plating of integrated circuits
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Electroless ni/pd/au metallization structure for copper interconnect substrate and method therefor
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