Y
Yoshinori Takao
Researcher at Yokohama National University
Publications - 125
Citations - 1364
Yoshinori Takao is an academic researcher from Yokohama National University. The author has contributed to research in topics: Plasma & Plasma etching. The author has an hindex of 20, co-authored 120 publications receiving 1164 citations. Previous affiliations of Yoshinori Takao include Kyoto University.
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Model for bias frequency effects on plasma-damaged layer formation in Si substrates
TL;DR: In this paper, the authors proposed a simplified model introducing a stopping power Sd(Eion) with a power-law dependence on the energy of incident ions (Eion), and applied this model to damaged-layer formation in plasma with an rf bias, where various energies of incident ion are expected.
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Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring
Yoshinori Nakakubo,Asahiko Matsuda,Masanaga Fukasawa,Yoshinori Takao,Tetsuya Tatsumi,Koji Eriguchi,Kouichi Ono +6 more
TL;DR: In this article, a two-layer (SiO2/Si) optical model was revised for in-line monitoring of H2-plasma damage, showing that the interface layer plays an important role in the optical assessment of the plasma-damage layer.
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A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis
TL;DR: In this article, a microplasma thruster was developed, consisting of a cylindrical micro-plasma source 10mm long and 1.5mm in inner diameter and a conical micronozzle 1.0-1.4mm long with a throat of 0.12-0.2mm in diameter.
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Modeling of ion-bombardment damage on Si surfaces for in-line analysis
TL;DR: In this paper, the structure and mechanism of ion-bombardment damage on silicon wafers exposed to plasma were investigated comprehensively using molecular dynamics simulations high-resolution transmission electron microscopy, and composition analysis by high resolution Rutherford backscattering spectroscopy, features such as gradual transition from the SiO 2 surface to the Si substrate and interface roughness were addressed.
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Structural and electrical characterization of HBr/O2 plasma damage to Si substrate
Masanaga Fukasawa,Yoshinori Nakakubo,Asahiko Matsuda,Yoshinori Takao,Koji Eriguchi,Kouichi Ono,Masaki Minami,Fumikatsu Uesawa,Tetsuya Tatsumi +8 more
TL;DR: In this paper, spectroscopic ellipsometry (SE), high-resolution Rutherford backscattering spectroscopy, and transmission electron microscopy were used to investigate silicon substrate damage caused by HBr/O2 plasma exposure.