Showing papers by "Yoshio Satoh published in 2010"
TL;DR: The first 24 and 30 GHz band thin-film bulk acoustic resonator (FBAR) filters were reported in this paper, which were configured with air-gap-type FBARs on a flat silicon substrate.
Abstract: The first 24 and 30 GHz band thin-film bulk acoustic resonator (FBAR) filters are reported in this paper. The filters were configured with air-gap-type FBARs on a flat silicon substrate. They were designed using a Butterworth–Van-Dyke (BVD) equivalent circuit considering the linear relationship between resonant frequency, capacitance ratio, and loss in the FBAR. The measured characteristics corresponded with those of the simulation using the equivalent circuit in the pass-band. The center frequency, fractional bandwidth, minimum insertion loss, and out-of-band suppression were 23.8 GHz, 3.4%, -3.8 dB, and -13 dB in the 24 GHz band filter, and 29.2 GHz, 3.4%, -3.8 dB, and -11 dB in the 30 GHz band filter, respectively.
46 citations
TL;DR: In this paper, the authors discuss the nonlinear performance difference between surface acoustic wave (SAW) and bulk acoustic wave resonators, which include intermodulation distortion (IMD) or triple-beat (TB) products, and indicate the importance of reducing even-order nonlinearities of BAW resonators.
Abstract: In this paper, we discuss the nonlinear performance difference between surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators, which include intermodulation distortion (IMD) or triple-beat (TB) products, and indicate the importance of reducing even-order nonlinearities of BAW resonators. We were able to validate the accuracy and efficiency of our proposed simulation technique for BAW devices by comparing the results of our simulation with experimental data. We verified that our circuit model is a high-performance tool that can be used to predict BAW device nonlinearities, and we propose how to suppress even-order nonlinearities by employing a thin-film bulk acoustic resonator (FBAR) duplexer for wideband code division multiple access (WCDMA) band 1. Finally, we introduce highly linear FBAR duplexers.
20 citations
Patent•
24 Feb 2010TL;DR: In this article, an acoustic wave device with interdigital transducer electrodes and SiO 2 film covers the electrodes is presented, and the displacement adjustment film is formed from a substance whose acoustic velocity is slower than that of the substance forming the SiO2 film.
Abstract: An acoustic wave device of the present application includes a piezoelectric substrate ( 14 ), interdigital transducer electrodes ( 13 ) formed on the piezoelectric substrate ( 14 ), and an SiO 2 film ( 12 ) formed so as to cover the electrodes ( 13 ). The acoustic wave device also includes a displacement adjustment film ( 11 ) formed on the SiO 2 film ( 12 ), and the displacement adjustment film ( 11 ) is formed from a substance whose acoustic velocity is slower than that of the substance forming the SiO 2 film ( 12 ). According to this configuration, it is possible to suppress unnecessary waves as well as improve temperature characteristics. Also, by mounting such an acoustic wave device in a communication module or communication apparatus, it is possible to achieve an improvement in reliability.