Y
You Seung Rim
Researcher at Sejong University
Publications - 122
Citations - 4901
You Seung Rim is an academic researcher from Sejong University. The author has contributed to research in topics: Thin-film transistor & Thin film. The author has an hindex of 27, co-authored 104 publications receiving 3615 citations. Previous affiliations of You Seung Rim include University of California & Yonsei University.
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Effects of high-pressure H2O-annealing on amorphous IGZO thin-film transistors
TL;DR: In this article, the effects of high-pressure annealing were investigated using amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs).
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Investigation of solution-processed amorphous SrInZnO thin film transistors
TL;DR: In this article, the effects of Sr incorporation and annealing temperature on solution-processed amorphous SIZO TFTs, Hall measurements, thermogravimetry-differential thermal analysis, transmittance measurements, and X-ray diffraction were performed.
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Effective surface diffusion of nickel on single crystal β-Ga2O3 for Schottky barrier modulation and high thermal stability
TL;DR: In this article, a shallow interfacial layer was formed by the diffusion of Ni atoms into β-Ga2O3 after post-annealing treatment, which significantly influenced the electrical performance of the CMFS-Ni/β-Ga 2O3 SBDs.
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Large-Area, Ultrathin Metal-Oxide Semiconductor Nanoribbon Arrays Fabricated by Chemical Lift-Off Lithography
Chuanzhen Zhao,Xiaobin Xu,Sang-Hoon Bae,Qing Yang,Wenfei Liu,Jason N. Belling,Kevin M Cheung,You Seung Rim,You Seung Rim,Yang Yang,Anne M. Andrews,Anne M. Andrews,Paul S. Weiss +12 more
TL;DR: A high-throughput approach for producing arrays of ultrathin (∼3 nm) In2O3 nanoribbon FETs at the wafer scale is reported, achieving current on-to-off ratios over 107 and carrier mobilities up to 13.7 cm2 V-1 s-1.
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Preparation of Al-doped ZnO thin film deposited at room temperature
TL;DR: In this article, the optical, structural and electrical properties of al-doped ZnO (AZO) thin films were investigated as a function of O 2 gas flow rate.