S
Si Joon Kim
Researcher at Kangwon National University
Publications - 82
Citations - 1739
Si Joon Kim is an academic researcher from Kangwon National University. The author has contributed to research in topics: Thin-film transistor & Thin film. The author has an hindex of 19, co-authored 77 publications receiving 1257 citations. Previous affiliations of Si Joon Kim include University of Texas at Dallas & Yonsei University.
Papers
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Review of solution-processed oxide thin-film transistors
TL;DR: In this paper, the authors summarize solution-processed oxide thin-film transistors (TFTs) researches based on their fulfillments and present low temperature process for the adoption of flexible devices.
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Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films: A Review of Recent Advances
TL;DR: In this paper, recent advances in the ferroelectric properties of HZO thin films, including doping effects, mechanical stress effects, interface effects, and film thickness effects, are comprehensively reviewed.
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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
Si Joon Kim,Dushyant Narayan,Jae-Gil Lee,Jaidah Mohan,Joy S. Lee,Jaebeom Lee,Harrison Sejoon Kim,Young-Chul Byun,Antonio T. Lucero,Chadwin D. Young,Scott R. Summerfelt,Tamer San,Luigi Colombo,Jiyoung Kim +13 more
TL;DR: In this article, the authors report on atomic layer deposited Hf0.5Zr 0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45μC/cm2) and a low FE saturation voltage (∼1.5V) as extracted from pulse write/read measurements.
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Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films
Si Joon Kim,Jaidah Mohan,Jaebeom Lee,Joy S. Lee,Antonio T. Lucero,Chadwin D. Young,Luigi Colombo,Scott R. Summerfelt,Tamer San,Jiyoung Kim +9 more
TL;DR: In this paper, the effect of the thickness of Hf0.5Zr 0.5O2 (HZO) film on the ferroelectric and dielectric properties using pulse write/read measurements was investigated.
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Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.
Young Jun Tak,Byung Du Ahn,Sung Pyo Park,Si Joon Kim,Ae Ran Song,Kwun-Bum Chung,Hyun Jae Kim +6 more
TL;DR: Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.81 cm2/Vs, 3.96 × 107 to 1.03 108, and 11.2 to 7.2 V, respectively.