Y
Youichiro Ohuchi
Researcher at Mitsubishi
Publications - 17
Citations - 668
Youichiro Ohuchi is an academic researcher from Mitsubishi. The author has contributed to research in topics: Light-emitting diode & Schottky diode. The author has an hindex of 11, co-authored 17 publications receiving 660 citations. Previous affiliations of Youichiro Ohuchi include Mie University.
Papers
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Journal ArticleDOI
High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
Kazuyuki Tadatomo,Hiroaki Okagawa,Youichiro Ohuchi,Takashi Tsunekawa,Yoshiyuki Imada,Munehiro Kato,Tsunemasa Taguchi +6 more
TL;DR: In this paper, a patterned sapphire substrate (PSS) with parallel grooves along the SA direction was fabricated by standard photolithography and subsequent reactive ion etching (RIE).
Journal ArticleDOI
High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
Kazuyuki Tadatomo,Hiroaki Okagawa,Youichiro Ohuchi,Takashi Tsunekawa,Takahide Jyouichi,Yoshiyuki Imada,Munehiro Kato,Hiromitsu Kudo,Tsunemasa Taguchi +8 more
TL;DR: In this paper, an InGaN multi-quantum-well (MQW) structure was fabricated on a patterned sapphire substrate (PSS) using a single growth process of metalorganic vapor phase epitaxy.
Patent
Group-III nitride based light emitter
TL;DR: A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer between a p-type cladding layer and an active layer is presented in this article.
Proceedings ArticleDOI
High-output power near-ultraviolet and violet light-emitting diodes fabricated on patterned sapphire substrates using metalorganic vapor phase epitaxy
Kazuyuki Tadatomo,Hiroaki Okagawa,Youichiro Ohuchi,Takashi Tsunekawa,Hiromitsu Kudo,Yasuhide Sudo,Munehiro Kato,Tsunemasa Taguchi +7 more
TL;DR: In this paper, a patterned-sapphire substrate (PSS) was used to grow a GaN layer with a dislocation density of 1.5x108 cm-2.
Journal ArticleDOI
Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation
Atsushi Motogaito,K. Ohta,Kazumasa Hiramatsu,Youichiro Ohuchi,Kazuyuki Tadatomo,Yutaka Hamamura,Kazutoshi Fukui +6 more
TL;DR: In this paper, the Schottky type ultraviolet (UV) detectors with transparent electrode between vacuum ultraviolet (VUV) and visible light region using synchrotron radiation was described.