Showing papers by "Yu. A. Pashkin published in 2022"

Zero-average Bias Bidirectional Single-electron Current Generation in a Hybrid Turnstile

Abstract: Abstract Hybrid turnstiles have proven to generate accurate single-electron currents. The usual operation consists of applying a periodic modulation to a capacitively coupled gate electrode and requires a nonzero DC source-drain bias voltage. Under this operation, a current of the same magnitude and opposite direction can be generated by flipping the polarity of the bias. Here, we demonstrate that accurate single-electron currents can be generated under zero average bias voltage. We achieve this by applying an extra periodic modulation with twice the frequency of the gate signal and zero DC level to the source electrode. This creates a time interval, which is otherwise zero, between the crossings of tunnelling thresholds that enable single-electron tunnelling. Furthermore, we show that within this operation the current direction can be reversed by only shifting the phase of the source signal.

Suppression of Back-Tunneling Events in Hybrid Single-Electron Turnstiles by Source-Drain Bias Modulation

Abstract: Accuracy of single-electron currents produced in hybrid turnstiles at high operation frequencies is, among other errors, limited by electrons tunnelling in the wrong direction. Increasing the barrier transparency between the island and the leads, and the source-drain bias helps to suppress these events in a larger frequency range, although they lead to some additional errors. We experimentally demonstrate a driving scheme that suppresses tunnelling in the wrong direction hence extending the range of frequencies for generating accurate single-electron currents. The main feature of this approach is an additional AC signal applied to the bias with twice the frequency as the one applied to the gate electrode. This allows additional modulation of the island chemical potential. By using the new approach under certain parameters, we improve the single-electron current accuracy by one order of magnitude. Finally, we show through experimentally-contrasted calculations that our method can improve accuracy even in devices for which the usual gate driving gives errors $\sim 10^{-3}$ at high frequencies and can bring them under $5\times 10^{-4}$.

Photothermal Responsivity of van der Waals Material-Based Nanomechanical Resonators

Abstract: Nanomechanical resonators made from van der Waals materials (vdW NMRs) provide a new tool for sensing absorbed laser power. The photothermal response of vdW NMRs, quantified from the resonant frequency shifts induced by optical absorption, is enhanced when incorporated in a Fabry–Pérot (FP) interferometer. Along with the enhancement comes the dependence of the photothermal response on NMR displacement, which lacks investigation. Here, we address the knowledge gap by studying electromotively driven niobium diselenide drumheads fabricated on highly reflective substrates. We use a FP-mediated absorptive heating model to explain the measured variations of the photothermal response. The model predicts a higher magnitude and tuning range of photothermal responses on few-layer and monolayer NbSe2 drumheads, which outperform other clamped vdW drum-type NMRs at a laser wavelength of 532 nm. Further analysis of the model shows that both the magnitude and tuning range of NbSe2 drumheads scale with thickness, establishing a displacement-based framework for building bolometers using FP-mediated vdW NMRs.

Optoelectrical Nanomechanical Resonators Made from Multilayered Two-Dimensional Materials

Abstract: Studies involving nanomechanical motion have evolved from the detection and understanding of its fundamental aspects to its promising practical utility as an integral component of hybrid systems. The nanomechanical resonators’ indispensable role as transducers between optical and microwave fields in hybrid systems, such as quantum communications interfaces, have elevated their importance in recent years. It is therefore crucial to determine which among the family of nanomechanical resonators is more suitable for this role. Most of the studies revolve around nanomechanical resonators of ultrathin structures because of their inherently large mechanical amplitude due to their very low mass. Here, we argue that the underutilized nanomechanical resonators made from multilayered two-dimensional (2D) materials are the better fit for this role because of their comparable electrostatic tunability and potential for larger optomechanical responsivity. To show this, we first demonstrate the electrostatic tunability of mechanical modes of a multilayered nanomechanical resonator made from graphite. We also show that the optimal values of optomechanical responsivities are obtained for multilayered devices, particularly when the Fabry–Perot gap is close to half the detection wavelength. Finally, by using the multilayered model and comparing this device with the reported ones, we find that the electrostatic tunability of devices of intermediate thickness is not significantly lower than that of ultrathin ones. Together with the practicality in terms of fabrication ease and design predictability, we contend that multilayered 2D nanomechanical resonators are the optimal choice for the electromagnetic interface in integrated quantum systems.

Thermal transport in nanoelectronic devices cooled by on-chip magnetic refrigeration

Abstract: On-chip demagnetization refrigeration has recently emerged as a powerful tool for reaching microkelvin electron temperatures in nanoscale structures. The relative importance of cooling on-chip and off-chip components and the thermal subsystem dynamics are yet to be analyzed. We study a Coulomb blockade thermometer with on-chip copper refrigerant both experimentally and numerically, showing that dynamics in this device are captured by a first-principles model. Our work shows how to simulate thermal dynamics in devices down to microkelvin temperatures, and outlines a recipe for a low-investment platform for quantum technologies and fundamental nanoscience in this novel temperature range.