Y
Yu. A. Pashkin
Researcher at Lancaster University
Publications - 85
Citations - 4856
Yu. A. Pashkin is an academic researcher from Lancaster University. The author has contributed to research in topics: Josephson effect & Quantum tunnelling. The author has an hindex of 20, co-authored 76 publications receiving 4421 citations. Previous affiliations of Yu. A. Pashkin include Lebedev Physical Institute & Russian Academy of Sciences.
Papers
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Journal ArticleDOI
Experimental investigation of hybrid single-electron turnstiles with high charging energy
Antti Kemppinen,Sergey Kafanov,Yu. A. Pashkin,Jaw-Shen Tsai,Dmitri V. Averin,Jukka P. Pekola +5 more
TL;DR: In this paper, the authors present an experimental study of hybrid turnstiles with high charging energies in comparison to the superconducting gap and show that a fast rise time can suppress errors due to leakage current.
Journal ArticleDOI
Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness
TL;DR: In this article, a novel method for suppression of quasiparticle poisoning in Al Coulomb blockade devices is proposed based on creation of a proper energy gap profile along the device.
Journal ArticleDOI
Single-electronic radio-frequency refrigerator.
Sergey Kafanov,Antti Kemppinen,Yu. A. Pashkin,Matthias Meschke,Jaw-Shen Tsai,Jukka P. Pekola +5 more
TL;DR: It is demonstrated experimentally that a hybrid single-electron transistor with superconducting leads and a normal-metal island can be refrigerated by an alternating voltage applied to the gate electrode.
Journal ArticleDOI
Potential barrier modification and interface states formation in metal-oxide-metal tunnel junctions
Hyuntae Jung,Yongmin Kim,Kyooho Jung,Hyunsik Im,Yu. A. Pashkin,Oleg V. Astafiev,Yasunobu Nakamura,Hosik Lee,Yoshiyuki Miyamoto,Jaw-Shen Tsai +9 more
TL;DR: In this paper, the authors show that the barrier profile of in situ grown AlOx tunnel barriers strongly depends on the material choices of the oxide-metal interface and that the formation of metal-induced gap states originating from the hybridization between the metallic bands and Al2O3 conduction band is responsible for tunnel barrier modification.
Book
Quantum Computing in Solid State Systems
TL;DR: In this paper, the authors present a detailed account of the transition of a Qubit from a single-person to a two-person QUBIT with the help of a femto-expander.