Y
Yu. M. Tairov
Researcher at Russian Academy of Sciences
Publications - 40
Citations - 1155
Yu. M. Tairov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Silicon carbide & Lely method. The author has an hindex of 12, co-authored 40 publications receiving 1105 citations.
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Journal ArticleDOI
Investigation of growth processes of ingots of silicon carbide single crystals
Yu. M. Tairov,V. F. Tsvetkov +1 more
TL;DR: In this article, the possibility of producing silicon carbide single-crystalline ingots from seeds in the 1800 to 2600°C range has been established, which is very promising at low temperatures.
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General principles of growing large-size single crystals of various silicon carbide polytypes
Yu. M. Tairov,V. F. Tsvetkov +1 more
TL;DR: In this article, the results of studies concerned with the processes of growing large silicon carbide single crystals of only one polytype were summarized, and the conditions of growing crystals of various polytypic structures were discussed.
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Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phase
TL;DR: In this paper, it was observed that at argon pressures in the growth region exceeding 10 Torr, diffusive mass transfer in the vapour phase is the limiting stage of the growth of epitaxial layers, whereas at pressures lower than 10 TorR heterogeneous reactions on the boundary surfaces become the limiting phase.
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The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth
TL;DR: In this article, the authors discuss the results of the investigation (both theoretical and experimental) of mass transfer in the βSiC-α-SiC system in conditions of about zero temperature gradient.
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Investigation of silicon carbide single crystals doped with scandium
TL;DR: In this paper, it was shown that the scandium solubility in SiC is limited within the 1800 to 2600°C temperature range and amounts to (2 to 3) × 1017 cm−3.