Yuan Chen

TL;DR: In this paper, the authors studied leakage currents and dielectric breakdown in MIS capacitors of metal-aluminum oxide-silicon (AlN) with a thickness and structure that depended on the process time and temperature.

TL;DR: In this article, three different types of SEGR modes, namely the micro-break, the thermal runaway, and the avalanche breakdown, have been investigated, and data that demonstrates these stages of device failure are presented as well as a proposed model for the micro break.

TL;DR: In this paper, a methodology for designing reliability into electronics for low-temperature applications has been developed, which takes account of the evaluation of the hot carrier aging impact on the technology, analysis of circuit critical paths, transistor substrate current profile and temperature profile to determine the most applicable transistor size in order to meet reliability requirements.

TL;DR: In this paper, a hot carrier aging (HCA) lifetime projection model is proposed to take into account the HCA impact on technology, analysis of parametric degradation versus critical circuit path degradation, transistor bias profile, transistor substrate current profile, and operating temperature profile.

TL;DR: The approach integrates the impact of the statistical nature of transistor lifetime on circuit reliability to give a more realistic circuit reliability projection and can be applied and easily extended to other failure mechanisms for any varying temperature operating conditions.