Radial mixing and segregation of granular bed bi-dispersed both in particle size and density within horizontal rotating drum

Investigation of the ball wear in a planetary mill by DEM simulation

The present disclosure provides a metal compound. The metal compound is represented by a formula(I): Cu 2 A α B 2-α O 4-β . A contains at least one element selected from the groups 6 and 8 of the periodic table. B contains at least one element selected from the group13 of the periodic table, 0<α<2, and 0<β<1.5. Polymer article and containing the metal compound and method for preparing the polymer article as well as selective metallization of a surface of the polymer article are also provided. In addition, the present disclosure provides an ink composition and the selective metallization for a surface of the insulative substrate using the ink composition.

Metal compound, method for preparing the same, selective metallization of surface of substrate with the metal compound

Thermodynamic behaviors of SiCl2 in silicon deposition by gas phase zinc reduction of silicon tetrachloride

Based on thermodynamic data for related pure substances, the relations of (nCl/nH)Eq and (nCl/nH)o have been plotted in the Si–Cl–H system. The results show that the difference of (nSi/nCl)o and (nSi/nCl)Eq is the driving force for polycrystalline silicon chemical vapor deposition (CVD). SiHCl3 is preferred for polycrystalline silicon deposition to SiCl4. SiH2Cl2 would be even better, but it is not stable as a gas and hence it is less frequently used. Then, thermodynamic simulation of polycrystalline silicon CVD in the Si–H–Cl system has been investigated. The pressure has a negative effect on polycrystalline silicon yield. The optimum temperature is 1400 K, at which the kinetic rate of rate-determining step for the main reaction is large enough. The excess hydrogen is necessary for polycrystalline silicon CVD in the Si–Cl–H system. However, the silicon deposition rate increases then decreases with increasing H2 molar fraction. The optimum H2 molar fraction should be determined by considering thermodynamics and transport phenomena simultaneously. Finally, the optimum conditions have been obtained as 1400 K, about 0.1 MPa, and H2 to SiHCl3 ratio of 15, which are close to the limited reported values in the open literature. Under the optimum conditions, the silicon yield ratio is 34.82% against 20% reported in the open literature.

Thermodynamic Simulation of Polycrystalline Silicon Chemical Vapor Deposition in Si–Cl–H System

In this paper, the standard entropy, heat capacity at constant pressure, standard enthalpy and standard Gibbs free energy of formation are estimated by application of two-parameter model. The model is relatively simple, accurate and practical. Based on the thermodynamic data for related pure compositions are reported, the five possible chemical reactions in the Cu2O-In2O3 system are studied in the process of preparation CuInO2 by solid reaction method. The relations between equilibrium constant and temperature is plotted. The curves of -T and lgK-1/T for the chemical reactions in the system have also been fitted. The results show that the Cu2O is easy to be oxidized into CuO, which reacts with In2O3 to yield Cu2In2O5 at lower temperature. However, the CuInO2, which is prepared from the Cu2O-In2O3 system, is oxidized into Cu2In2O5 easily in the oxygen atmosphere. The reaction of preparing CIO was reversible and incomplete. Therefore, preparation CIO is very difficult by solid reaction method whether in atmospheric pressure or isolated air and gas shield conditions, because K1 >-40kJ/mol.

Thermodynamic Study on CuInO2 Preparation by Solid Reaction Method

The cost of solar-grade silicon cannot be reduced in the Siemens process, which is the major process of producing polycrystalline silicon through current technologies. Therefore, the zinc reduction process, which can reduce solar-grade silicon in a cost effective manner, should be redeveloped for these conditions. The thermodynamics in the zinc reduction process are studied in this paper. When the reactions reach equilibrium, the equilibrium gas phase composition has been analyzed within the temperature range of 1184 to 1500 K at nSiCl4/nZn of 1/2, 1/4, 1/8 and P = 1 atm, 3 atm and 6 atm. Furthermore, the relations of the production ratio of silicon and pressure, temperature and the feed molar ratio (nZn/nSiCl4) are investigated and the graphs thereof are plotted. The major side-reactions affecting the production ratio of silicon have been established as: SiCl4(g) + Zn(g) → SiCl2(g) + ZnCl2(g) and SiCl4(g) + Si(s) → SiCl2(g). Finally, suitable operational conditions in the practical process of poly-silicon manufacture have been established, with 1200 K, 2 atm and the feed molar ratio (nZn/nSiCl4) of 4 at the entrance is the best conditions. A production ratio of silicon of 90.3% is achieved under these conditions. Furthermore, 1184 K, 2 atm and the feed molar ratio (nZn/nSiCl4) of 4 are the ideal conditions. Under these conditions, the theoretical yield is 98%.

Thermodynamic Study on Zinc Reduction Process for Production of Polycrystalline Silicon

The invention relates to a method for preparing cuprous oxide-indium trioxide solid solution superfine powder. The method comprises the following steps of: performing ultrasonic chemical reduction coprecipitation reaction on 9.99 to 99.99 percent of metal indium (In), copper sulfate (CuSO4.5H2O) and concentrated sulfuric acid (H2SO4) which serve as raw materials by using a sodium hydroxide (NaOH) solution as a precipitating agent, a glucose (C6H12O12) solution as a reducing agent and absolute ethanol (CH3CH2OH) as a stabilizing agent and a dispersing agent; reducing and aging at constant temperature; performing centrifugal separation; washing, and dispersing; and drying, calcining, and thus obtaining the cuprous oxide-indium trioxide solid solution superfine powder. The obtained cuprous oxide-indium trioxide solid solution superfine powder has the particle size of 30 to 50nm, has spherical particles, high purity and a high dispersing property and is distributed uniformly; and the method is simple, has a short production period and is convenient to operate.

Method for preparing cuprous oxide-indium trioxide solid solution superfine powder

Noisy-power dissipation and efficiency in NiO/Fe2O3 wet grinding by planetary ball mill

Abstract To investigate the optimum conditions of the CuInO2 (CIO) preparation by cation exchange reaction method, the standard entropy, thermal capacity at constant pressure, standard enthalpy and standard Gibbs free energy of formation were estimated. The relations of temperature (T) and thermodynamic equilibrium constants (K), the conditions for three independent reactions were analyzed in CuInO2 preparation. The curves of Gibbs free energy-T, K − T and PCuCl − T for those reactions have been plotted. The results showed that the CIO powder could be synthesized by cation exchange reaction. There were two main reactions through the way of NaInO2 reacting with CuCl. One was NaInO2(s) reacting with CuCl(s) at T ≥ 1698 K. The cost was higher in the way. The other was NaInO2(s) reacting with CuCl(g) at T < 1698 K. However, the yield of CIO would be decreased because CuInO2 powder decomposed into Cu2O(s) and In2O3(s) with the temperature reduced, especially when T ≤ 573 K. And the higher vapor pressure of CuCl(g) was necessary for the process, which needs the higher temperature since the vapor pressure of CuCl(g) increases with increasing temperature, especially when T > 973 K. It was recommended that NaInO2(s) react with CuCl(g) for preparing CIO under conditions of 973 < T ≤ 1698 K and the vacuum in the reactor.

Yun Yao

Papers

Thermodynamic Study on CuInO2 Preparation by Solid Reaction Method

Thermodynamic Study on Zinc Reduction Process for Production of Polycrystalline Silicon

Method for preparing cuprous oxide-indium trioxide solid solution superfine powder

Noisy-power dissipation and efficiency in NiO/Fe2O3 wet grinding by planetary ball mill

Thermodynamics of CuInO2Preparation by Cation Exchange Reaction