Z
Zhengtang Luo
Researcher at Hong Kong University of Science and Technology
Publications - 198
Citations - 9299
Zhengtang Luo is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Graphene & Chemistry. The author has an hindex of 38, co-authored 157 publications receiving 7173 citations. Previous affiliations of Zhengtang Luo include University of Connecticut & University of Hong Kong.
Papers
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Journal ArticleDOI
Intrinsic Response of Graphene Vapor Sensors
TL;DR: In this paper, the authors demonstrate a cleaning process that verifiably removes the contamination on the device structure and allows the intrinsic chemical responses of the graphene monolayer to be measured.
Journal ArticleDOI
DNA translocation through graphene nanopores.
Christopher A. Merchant,Ken Healy,Meni Wanunu,Vishva Ray,Neil Peterman,John Bartel,Michael D. Fischbein,Kimberly Venta,Zhengtang Luo,A. T. Charlie Johnson,Marija Drndic +10 more
TL;DR: In this article, DNA translocations through nanopores created in graphene membranes are reported. But, the nanopores are made from 1-5 nm thick graphene membranes with electron-beam sculpted nanopores from 5 to 10 nm in diameter.
PatentDOI
High yield preparation of macroscopic graphene oxide membranes
Zhengtang Luo,Alan T. Johnson +1 more
TL;DR: In this article, the surface area of a graphene oxide membrane is shown to have a surface area above about 200 μm and exhibit electrical conductivity in excess of about 200 S/m.
Journal ArticleDOI
Photoluminescence and band gap modulation in graphene oxide
TL;DR: In this paper, the authors report broadband visible photoluminescence from solid graphene oxide, and modifications of the emission spectrum by progressive chemical reduction, suggesting a gapping of the two-dimensional electronic system by removal of π-electrons.
Journal ArticleDOI
Effect of Substrate Roughness and Feedstock Concentration on Growth of Wafer-Scale Graphene at Atmospheric Pressure
Zhengtang Luo,Ye Lu,Daniel W. Singer,Matthew E. Berck,Luke A. Somers,Brett R. Goldsmith,A. T. Charlie Johnson +6 more
TL;DR: In this article, an atmospheric pressure chemical vapor deposition (CVD) method was developed for the growth of large-area graphene on catalytic metal substrates, which is potentially more cost-effective and compatible with industrial production than approaches based on synthesis under high vacuum, and the results showed that field effect transistors fabricated from CVD graphene made with the optimized process had room temperature hole mobilities that are a factor of 2−5 larger than those measured for samples grown on as-purchased Cu foil with larger methane concentration.