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Introduction To Electrodynamics

Science and technologies based on terahertz frequency electromagnetic radiation (100 GHz–30 THz) have developed rapidly over the last 30 years. For most of the 20th Century, terahertz radiation, then referred to as sub-millimeter wave or far-infrared radiation, was mainly utilized by astronomers and some spectroscopists. Following the development of laser based terahertz time-domain spectroscopy in the 1980s and 1990s the field of THz science and technology expanded rapidly, to the extent that it now touches many areas from fundamental science to 'real world' applications. For example THz radiation is being used to optimize materials for new solar cells, and may also be a key technology for the next generation of airport security scanners. While the field was emerging it was possible to keep track of all new developments, however now the field has grown so much that it is increasingly difficult to follow the diverse range of new discoveries and applications that are appearing. At this point in time, when the field of THz science and technology is moving from an emerging to a more established and interdisciplinary field, it is apt to present a roadmap to help identify the breadth and future directions of the field. The aim of this roadmap is to present a snapshot of the present state of THz science and technology in 2017, and provide an opinion on the challenges and opportunities that the future holds. To be able to achieve this aim, we have invited a group of international experts to write 18 sections that cover most of the key areas of THz science and technology. We hope that The 2017 Roadmap on THz science and technology will prove to be a useful resource by providing a wide ranging introduction to the capabilities of THz radiation for those outside or just entering the field as well as providing perspective and breadth for those who are well established. We also feel that this review should serve as a useful guide for government and funding agencies.

The 2016 terahertz science and technology roadmap

There has been a resurgence of complex oxides of late owing to their ferroelectric and ferromagnetic properties. Although these properties had been recognized decades ago, the renewed interest stems from modern deposition techniques that can produce high quality materials and attractive proposed device concepts. In addition to their use on their own, the interest is building on the use of these materials in a stack also. Ferroelectrics are dielectric materials that have spontaneous polarization in certain temperature range and show nonlinear polarization–electric field dependence called a hysteresis loop. The outstanding properties of the ferroelectrics are due to non-centro-symmetric crystal structure resulting from slight distortion of the cubic perovskite structure. The ferroelectric materials are ferroelastic also in that a change in shape results in a change in the electric polarization (thus electric field) developed in the crystal and vice versa. Therefore they can be used to transform acoustic wav...

Processing, Structure, Properties, and Applications of PZT Thin Films

The impact-induced deposition of Al13 clusters with icosahedral structure on Ni(0 0 1) surface was studied by molecular dynamics (MD) simulation using Finnis–Sinclair potentials. The incident kinetic energy (Ein) ranged from 0.01 to 30 eV per atom. The structural and dynamical properties of Al clusters on Ni surfaces were found to be strongly dependent on the impact energy. At much lower energy, the Al cluster deposited on the surface as a bulk molecule. However, the original icosahedral structure was transformed to the fcc-like one due to the interaction and the structure mismatch between the Al cluster and Ni surface. With increasing the impinging energy, the cluster was deformed severely when it contacted the substrate, and then broken up due to dense collision cascade. The cluster atoms spread on the surface at last. When the impact energy was higher than 11 eV, the defects, such as Al substitutions and Ni ejections, were observed. The simulation indicated that there exists an optimum energy range, which is suitable for Al epitaxial growth in layer by layer. In addition, at higher impinging energy, the atomic exchange between Al and Ni atoms will be favourable to surface alloying.

Nuclear instruments and methods in physics research section B : beam interactions with materials and atoms

Two-dimensional (2D) materials have drawn tremendous attention in recent years. Being atomically thin, stacked with van der Waals force and free of surface chemical dangling bonds, 2D materials exhibit several distinct physical properties. To date, 2D materials include graphene, transition metal dichalcogenides (TMDS), black phosphorus, black P(1-x) Asx , boron nitride (BN) and so forth. Owing to their various bandgaps, 2D materials have been utilized for photonics and optoelectronics. Photodetectors based on 2D materials with different structures and detection mechanisms have been established and present excellent performance. In this Review, localized field enhanced 2D material photodetectors (2DPDs) are introduced with sensitivity over the spectrum from ultraviolet, visible to infrared in the sight of the influence of device structure on photodetector performance instead of directly illustrating the detection mechanisms. Six types of localized fields are summarized. They are: ferroelectric field, photogating electric field, floating gate induced electrostatic field, interlayer built-in field, localized optical field, and photo-induced temperature gradient field, respectively. These localized fields are proved to effectively promote the detection ability of 2DPDs by suppressing background noise, enhancing optical absorption, improving electron-hole separation efficiency, amplifying photoelectric gain and/or extending the detection range.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201700894

Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet—Visible to Infrared

2D materials are considered to be the most promising materials for photodetectors due to their unique optical and electrical properties. Since the discovery of graphene, many photodetectors based on 2D materials have been reported. However, the low quantum efficiency, large noise, and slow response caused by the thinness of 2D materials limit their application in photodetectors. Here, recent progress on 2D material photodetectors is reviewed, covering the spectrum from ultraviolet to terahertz waves. First the interaction of 2D materials with light is analyzed in terms of optical physics. Then the present methods to improve the performance of 2D material photodetectors are summarized, such as defect engineering, p-n junctions and hybrid detectors, and the issue of serious overestimation of the performance in reported photodetectors based on 2D materials is discussed. Next, a comparison of 2D material photodetectors with traditional commercially available detectors shows that it is difficult to balance the current 2D material photodetectors with regard to having simultaneously both high sensitivity and fast response. Finally, a possible novel EIW mechanism is suggested to advance the performance of 2D material photodetectors in the future.

Photodetectors of 2D Materials from Ultraviolet to Terahertz Waves

Mn-Co-Ni-O (MCN) spinel oxide material, a very important transition metal oxide (TMO) with the best application prospects in information and energy fields, was discovered over five decades ago, but its applications have been impeded by the quality of its films due to the magnitude of deposition challenge. Here we report that high quality of MCN nanofilms can be achieved by sputtering deposition via acetate precursors whose decomposition temperatures are matched to the initial synthesis temperature of the MCN thin films. Excellent performance of MCN nanofilms is demonstrated, combining for the first time preferred orientation, high temperature coefficient of resistance and moderate resistivity. The film devices show an intrinsic recombination with a much faster rate of the order of a microsecond for the laser-pumped carriers, which is ~3 orders of magnitude larger compared with that of the ceramic material. The electronic structure of the thin films confirms that it is indeed of n-type nature, exhibiting appropriate electronic states consistent with the levels of metal electrodes and semiconductors. The results offer a vital avenue for depositing high performance TMO thin films for advanced oxide devices and will have great significance for exploiting new applications in modern oxide electronics and optoelectronics.

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High performance of Mn-Co-Ni-O spinel nanofilms sputtered from acetate precursors

Mn1.56Co0.96Ni0.48O4 films with spinel structure were prepared on Al2O3 substrate by chemical solution deposition method. The microstructure of the films was studied by atomic force microscope and field-emission scanning electron microscope. The current-voltage characteristics showed Ohmic conductivity in the temperature range of 245–295K. The conduction was described by a variable range hopping model for a parabolic density of states. The advantages of high characteristic temperature, as well as high transition temperature (201K) between ferromagnetic and paramagnetic phases make the Mn1.56Co0.96Ni0.48O4 films very promising for infrared detection, especially for functional devices by integrating magnetic and electronic properties of the materials.

Characterization of Mn1.56Co0.96Ni0.48O4 films for infrared detection

Phototransistors based on two dimensional semiconductors have drawn increasing attention in recent years. GaSe is a typical semiconductor with a layered structure. In this work, the ultrathin GaSe nanosheets were exfoliated from commercially available crystals using a micromechanical cleavage technique. Then, the nanosheets were used to fabricate field effect transistors (FETs) on Si/SiO2 substrates with interdigitated electrodes. The electrical and optoelectronic properties of the FET were characterized. The phototransistor based on a GaSe nanosheet had a high photoresponsivity (∼2200 mA/W) and a high Iphoto/Idark (photoresponse current over dark current) ratio of almost 103.

Highly sensitive phototransistor based on GaSe nanosheets

A method of analyzing infrared spectroscopic ellipsometry (IRSE) measurement data is proposed for lead zirconate titanate PbZrxTi1−xO3 (PZT) thin films grown on Pt/Ti/SiO2/Si substrates with x=0.3 and 0.5. The IRSE data measured at an angle of incidence 75° for x=0.3 and 70° for x=0.5 are fitted by a dielectric function formula. The refractive index and extinction coefficient of PZT with x=0.3 and 0.5 are determined in the spectral range of 2.5–12.5 μm. As the wavelength increases, the refractive index decreases, on the contrary, the extinction coefficient increases. The absorption coefficient for x=0.5 is greater than that for x=0.3 by a factor of 1.5. The effective static ionic charges have also been derived, which are smaller than they would be in a purely ionic material for PZT thin films.

Zhiming Huang

Papers

Photodetectors of 2D Materials from Ultraviolet to Terahertz Waves

High performance of Mn-Co-Ni-O spinel nanofilms sputtered from acetate precursors

Characterization of Mn1.56Co0.96Ni0.48O4 films for infrared detection

Highly sensitive phototransistor based on GaSe nanosheets

Optical properties of PbZrxTi1−xO3 on platinized silicon by infrared spectroscopic ellipsometry