Samsung Corning Precision Glass

About: Samsung Corning Precision Glass is a based out in . It is known for research contribution in the topics: Display device & Layer (electronics). The organization has 182 authors who have published 88 publications receiving 958 citations.

Display filter and display device including the same

Abstract: A display filter capable of enhancing the visible light transmittance and contrast ratio for a bright room condition and a display device including the same. The display filter includes a filter base, and an external light-shielding layer, disposed on a surface of the filter base, including a matrix made of a transparent resin and a plurality of wedge-shaped black stripes arranged parallel to each other at a surface of the matrix.

External light-shielding layer, filter for display device including the external light-shielding layer and display device including the filter

Abstract: An external light-shielding layer capable of enhancing a visible light transmittance and a contrast ratio and preventing Moire fringe and Newton ring phenomena, a display filter including the external light-shielding layer, and a display device including the display filter. The external light-shielding layer includes a transparent resin matrix, and a plurality of light-shielding patterns formed on the transparent resin matrix and spaced apart from each other in a predetermined interval, wherein a bias angle (α) formed between a traveling direction of the light-shielding patterns and the longer side of the matrix is in a range of about 5 to 80 degrees.

Crystallization and electrical properties of ITO:Ce thin films for flat panel display applications

Abstract: ITO and ITO:Ce films were deposited by DC magnetron sputtering using an ITO (SnO 2 : 10 wt.%) target and CeO 2 doped ITO (CeO 2 : 0.5, 3.0, 4.0 and 6.0 wt.%) ceramic targets, respectively, on unheated non-alkali glass substrates (corning E2000). The as-deposited films were annealed at 200 °C in an Ar atmosphere at a pressure of 1 Pa. The crystallization temperature of the ITO film was increased by introducing Ce atoms because they decrease the level of crystallinity. It was also confirmed that the etching rate, surface morphology and work function were improved by the addition of Ce atoms despite there being increased resistivity. The current voltage ( I – V ) characteristics of the OLED devices deteriorated with increasing Ce content in the ITO anode, which was attributed to a decrease in carrier density despite there being a high work function. Therefore, the carrier density is one of the most important factors that determine the turn-on voltage for OLED applications.