Showing papers in "IETE Journal of Education in 2017"
TL;DR: In this paper, a comparative study of these disturbances has been presented for silicon, germanium, gallium arsenide, indium phosphide, WzGaN (wurtzite gallium nitride), 4H-SiC (silicon carbide) semiconductor materials-based double drift region (DDR) IMPATT diode at Ka-band as well as the cause of poor efficiency in the diode highlighted.
Abstract: Extra space charges are generated in the drift region due to the avalanche multiplication process and space charge effect of IMPATT (impact ionization and avalanche transit time) diode reduces the efficiency of the devices. The disturbances in electric field, drift voltage, and space charge resistance represent the space charge effect. In this paper, a comparative study of these disturbances has been presented for silicon, germanium, gallium arsenide, indium phosphide, WzGaN (wurtzite gallium nitride), 4H-SiC (silicon carbide) semiconductor materials-based double drift region (DDR) IMPATT diode at Ka-band as well as the cause of poor efficiency in the diode highlighted. This will be helpful for the selection of the suitable material for optimum design of DDR IMPATT diode as well as to improve the DC to radio frequency (RF) power conversion efficiency.
12 citations
TL;DR: In this paper, an effort is made to explore the possibility of utilizing stepped impedance concept in designing dual-band PCB monopole antenna, and a rigorous analysis of stepped impedan...
Abstract: In this paper, an effort is made to explore the possibility of utilizing stepped impedance concept in designing dual-band PCB monopole antenna. To start with, a rigorous analysis of stepped impedan...
6 citations
TL;DR: A tree of Karnaugh maps called generalized Karnaugh map is proposed, which can be constructed for any number of variables and analysed systematically to generate all prime implicants by going through only one map of 16 squares at a time.
Abstract: Karnaugh map method is a popular method for minimization of Boolean functions. It is widely used for four variables. But it is hardly used beyond six variables. In this paper, a tree of Karnaugh maps called generalized Karnaugh map is proposed. This map can be constructed for any number of variables and analysed systematically to generate all prime implicants by going through only one map of 16 squares at a time. A concept called ‘K–don't cares’ is used for this purpose. K–don't cares can be simplified if we do not insist on all prime implicants. Interestingly the new method requires no more than 16 minterms at a time. A seven-variable example is solved to illustrate the method.
5 citations
TL;DR: In this article, a RNS (residue number system) to binary converter for the three-moduli set {2n + k, 2n − 1, 2n−1 − 1} using mixed radix conversion technique is presented.
Abstract: In this paper, a RNS (residue number system) to binary converter for the three-moduli set {2n + k, 2n − 1, 2n−1 − 1} using mixed radix conversion technique is presented. Two reverse converter desig...
4 citations
TL;DR: The properties of loop- and node-analysis based matrices of reciprocal and non-reciprocal networks are reviewed and the synthesis of these networks from the matrices is presented through typical examples.
Abstract: The properties of loop- and node-analysis based matrices of reciprocal and non-reciprocal networks are reviewed. Then the synthesis of these networks from the matrices is presented through typical ...
3 citations
TL;DR: A systematic method is given for obtaining the input impedance of any complicated network, dealing with resistive networks first, and then all-L and all-C networks.
Abstract: When a network is a simple ladder network, its input impedance can be obtained simply using series–parallel reduction techniques. If there are bridging elements, such as bridged-T network or Wheats...
2 citations
TL;DR: In this article, the Enz-Krummenacher-Vittoz model equation has been applied to an NMOS (N-channel metal oxide semiconductor) transistor case present on P-substrate and P-well.
Abstract: The main aim of this tutorial is to apprise readers about parameter extraction and bias-point calculation using Enz–Krummenacher–Vittoz compact metal oxide semiconductor (MOS) model equation. The model equation has been applied to an NMOS (N-channel metal oxide semiconductor) transistor case present on the P-substrate and P-well. Two cases are considered to show parameters extraction and bias-point calculation for a modified/unmodified value of the transistor threshold voltage. After presenting equation simplification for the two cases, different parameter extraction methods are discussed. Then a common drain configuration biased by a resistance is simulated to match by hand-calculated results.
2 citations
TL;DR: R Rathore–Bhattacharya multiplier is modified/redesigned with a minimum number of components, and is given in this paper as a design idea.
Abstract: Time-division multiplier (TDM) can be developed using triangular wave or sawtooth wave as reference clock. However, Rathor and Bhattacharya developed a TDM without using any reference clock. Rathor...
2 citations
TL;DR: In this paper, a method for the reduction of higher order linear discrete time system into a desired reduced order model is presented, which uses the concept of pattern recognition which is adopted here for clustering the poles of the system.
Abstract: This paper presents a method for the reduction of higher order linear discrete time system into a desired reduced order model. The proposed algorithm uses the concept of pattern recognition which is adopted here for clustering the poles of the system. The centres of the clusters are treated as poles of the reduced order model and the overall transfer function of the reduced order model is obtained by both clustering algorithm and matching the ratio of coefficients of original and reduced order models. The original algorithm for c-means clustering is modified in order to avoid some limitations in model order reduction procedure. This new method makes the procedure simple, in addition to retaining the stability of the original higher order system in their reduced order models.
2 citations
TL;DR: In this paper, it was shown that the size of the KM depends not only upon the particular arrangement of cells but also on the size. And the valid size of a KM of N logic variables is shown to be (N + 1/2/2 × (N − 1)/2 for N odd.
Abstract: Karnaugh map (KM) method is very frequently used in reducing the logic functions. In this paper, it is shown that the reduction depends not only upon the particular arrangement of cells but also on the size of the KM. The valid size of a KM of N logic variables is shown to be N/2 × N/2 for N even and (N + 1)/2 × (N − 1)/2 for N odd. Alternatively, the number of variables in horizontal and vertical directions should be equal when N is even and differ by one when N is odd. In other words, KM is a square map when N is even and combinations of two identical square maps when N is odd.
1 citations
TL;DR: Using source transformation (ST) theorem and source shifting (SS) technique, respectively, the relations for delta to star and star to delta transformations when sources are also present are given.
Abstract: Using source transformation (ST) theorem and source shifting (SS) technique, respectively, the relations for delta to star and star to delta transformations when sources are also present are given....
TL;DR: In this article, an alternative derivation for the general condition for delivering maximum power from a 2-terminal network n to another n to N is given, which is solely dependent upon the Threshold condition.
Abstract: An alternative derivation for the general condition for delivering maximum power from a 2-terminal network n to another 2-terminal network N is given. This condition is solely dependent upon the Th...