Showing papers in "The Japan Society of Applied Physics in 1977"
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8 citations
TL;DR: In this paper, a new n-channel stacked-gate type nonvolatile memory transistor for both EP ROM and EEP ROM devices is presented, which can be characterized by the ease of channel electron injection, fast ultraviolet light erasure and the electrical erasure with single positive applied voltage using surface avalanche hole injection.
Abstract: A new structure n-channel stacked-gate type non-volatile memory transistor for both EP ROM and EEP ROM devices is presented. In this memory transistor, the P+ -region of high impurity concentration is diffusion-self-aligned (DSA) with the drain and the floating gate is.defined, also self-aligned with the control gate. Experimental results of various characteristics are presented and discussed with some analytical consideration. This memory transistor can be characterized by the ease of channel electron injection, fast ultraviolet light erasure and the electrical erasure with single positive applied voltage using surface avalanche hole injection.
5 citations
5 citations
TL;DR: In this article, high power gate turn-off thyristors (GTO's) are studied because of their gate turnoff capability in addition to the usual thyristor characteristics.
Abstract: High power gate turn-off thyristors (GTO's) are studied because of their gate turn-off capability in addition to the usual thyristor characteristics. GTO development, however, has suffered from difficulty in attaining high current gate turn-off capability. From the experimental results, maximum gate turn-off current IATO depends upon a factor (VJ1/ρSPB), as well as the n-base resistivity. On the basis of this principle success was achieved in realizing devices with more than 600 amperes of IATO. Various considerations were made for GTO design, together with numerous experiments in fabrication and characterization.
5 citations
TL;DR: The static induction transistor logic (SITL) equivalent to PL is evaluated by fabricating type D-F/F frequency divider and 14 bit BCD programmable counter to prove its potentiality in VLSI as mentioned in this paper.
Abstract: The static induction transistor logic (SITL) equivalent to PL is evaluated by fabricating type D-F/F frequency divider and 14 bit BCD programmable counter to prove its potentiality in VLSI. SITI2L is also implemented into LSI. The normally-configured SIT is introduced to serve as a driver transistor in the SITL having new circuit configuration in order to improve the speed performance, where output Schottky diodes are fabricated to ensure the decoupling between outputs. The performance of this Schottky SITL is evaluated in the ring oscillator, where the propagation delay is obtained 2.5 nsec at a power dissipation of 100 µW.
5 citations
TL;DR: In this paper, a nonvolatile memory FET was developed by using this MFS (Metal-Ferroelectric-Semiconductor) construction, which is about one order of magnitude smaller than that of similar type devices using other ferroelectrics such as Bi4Ti3O12, PZBFN and SbSI.
Abstract: A step-like change in the interface built-in potential by controlling the ferroelectric polarization has been observed in PLZT thin film sputtered on GaAs single crystal heterostructure junction. We have developed a nonvolatile memory FET by using this MFS (Metal-Ferroelectric-Semiconductor) construction. A typical performance of the GaAs device with a p-channel mode operation is that the writing ("0" to "1" threshold) gate voltage Von=1.5 V, the erasing ("1" to "0") gate voltage Voff=6.0 V, and the on state drain current Ion=0.1 mA. This operation power level obtained here is about one order of magnitude smaller than that of similar type devices using other ferroelectrics such as Bi4Ti3O12, PZBFN and SbSI. A series of technical data for the fabrication technologies including thin film deposition of the ferroelectric are presented, and the analyses on the device performance are also discussed.
4 citations
TL;DR: In this paper, a spectrum analysis of luminescence during deposition shows that SiH4 is easily dissociated to Si-atom in the presence of active nitrogen, and Si-atoms and N-atom exsist in a gas phase.
Abstract: The silicon nitride film is deposited by the reaction of SiH4 and active nitrogen, which is produced by the microwave excitation (2.45 GHz) of N2 alone. The activation energies from the Arrhenius plots are 0.6 Kcal./mole for 350°C–150°C and 2.3 Kcal./mole for 150°C–50°C. The film deposited below 150°C has a loose structure which leads to a faster etch rate. The refractive index of the films prepared for different concentrations of SiH4 has a maximum for each Rp and is less than 2. From I-R measurement, films by the present method are confirmed to be silicon nitride. An exact stoichiometry of Si3N4 is obtained under special conditions. A spectrum analysis of luminescence during deposition shows that SiH4 is easily dissociated to Si-atom in the presence of active nitrogen, and Si-atom and N-atom exsist in a gas phase.
3 citations
2 citations
2 citations
TL;DR: In this paper, an experimental investigation on diffraction efficiency of holographic gratings made of AZ2400 and the profile pattern of fine gratings (f=1000 lines/mm~2000/lines/mm), together with the numerical analysis of development process taking into account the two-dimensional etching effect was performed.
Abstract: The present report describes an experimental investigation on diffraction efficiency of holographic gratings made of AZ2400 and the profile pattern of fine gratings (f=1000 lines/mm~2000/lines/mm), together with the numerical analysis of development process taking into account the two-dimensional etching effect. The deviation from sinusoidal profile for increasing development time at higher spatial frequency range is observed by SEM. A tentative model to explain a preferential etching effect with the spatial pattern profile and the change in grating profile with increasing development time is presented. Thus the apparent spatial resolution of holographic grating made of photoresist can be attributed to the side etching effect during the development process.
2 citations
TL;DR: In this paper, a back-gate-input MOSFET (B-MOS) was proposed, which operates with supply voltages less than 0.5 V and at current levels in the region between 10-9 and 10-6 A.
Abstract: A new low-power device has been proposed, which uses the back gate of an MOSFET as the input terminal and the insulated gate as a bias terminal, contrary to the ordinary mode of MOSFET operation. The new device is called a back-gate-input MOS (B-MOS), which operates with supply voltages less than 0.5 V and at current levels in the region between 10-9 and 10-6 A. It is found that B-MOS is operated by photocurrent which flows across the built-in junction when it is illuminated. The propagation delay time per gate of B-MOS is measured as a function of light intensity. It is inversely proportional to light intensity, and is about 0.9 µsec at a light intensity of 5000 Lux. It is also seen that the propagation delay time of B-MOS is ten times faster than that of I2L at the same light intensity. The difference in delay times between B-MOS and I2L is explained by the difference in operating voltage and junction capacitance. Photocurrent-driven B-MOS circuits are also discussed.
TL;DR: In this paper, the authors describe the recent results of the GaAs Tunnett diode with p+ -n and p+ n-n+ structure prepared by a new liquid phase epitaxial growth method (temperature difference method under controlled vapor pressure).
Abstract: The tunnel injection transit time (Tunnett) diode is expected to be the useful solid state device, because it can be operated with lower bias voltage than that of the Impatt, and with extremely low noise level in the wavelength region from millimeter to submillimeter. This paper describes the recent results of the GaAs Tunnett diode with p+ -n and p+ -n-n+ structure prepared by a new liquid phase epitaxial growth method (temperature difference method under controlled vapor pressure) and the improvement of the device fabrication technique. The fundamental oscillation frequency from 110 to 208 GHz has been obtained and the lowest pulsed input power for the oscillation was 2.1 W.
TL;DR: In this article, a set of Bragg reflectors and acousto-optic reflectors with oppositely propagating surface acoustic waves were used to generate a 10 picosecond light pulse at a repetition frequency of a few GHz.
Abstract: A repetitively Q-switched semiconductor laser, which consists of a set of Bragg reflectors and acousto-optic reflectors with oppositely propagating surface acoustic waves, is proposed and the switching characteristics of the laser are analyzed. The analysis shows that ten picoseconds light pulse at a repetition frequency of a few GHz could be generated.
TL;DR: In this article, an AMI conversion efficiency of 7.3% was obtained with a cell configuration of a 25 µm thick p-type active layer and a 0.5 µm n+ -type surface layer for a relatively large area of 8.3 cm2.
Abstract: Thin-film solar cells are fabricated by chemical vapor deposition using SiH2Cl2 on polycrystalline wafers pulled from metallurgical-grade silicon. An AMI conversion efficiency of 7.3% is obtained with a cell configuration of a 25 µm thick p-type active layer and a 0.5 µm thick n+ -type surface layer for a relatively large area of 8.3 cm2. Photocurrent distribution measurements reveal that the grain boundary effect is of minor importance. Higher efficiency is attainable with the same structure in cases where the photocarrier diffusion length in the active layer is improved from the obtained value, 18µm, to a level conventional in an epitaxial layer on single crystals.