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Proceedings ArticleDOI

A High Q Cavity Stabilized Gunn Oscillator at 94 GHz

H. Barth
- pp 179-182
TLDR
In this paper, the set up and performance of a 94 GHz second harmonic Gunn oscillator that is cavity stabilized at its fundamental frequency is described, with a quality factor of about 7000 and reduced the phase noise by nearly 40 dB.
Abstract
The set up and the performance of a 94 GHz second harmonic Gunn oscillator that is cavity stabilized at its fundamental frequency is described. The cavity has a quality factor of about 7000 and reduces the phase noise by nearly 40 dB. The oscillator generates an output power of 40 mW, sufficient to drive low noise balanced mixers, to synchronize Impatt oscillators or to operate as a reference source in coherent radar systems.

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Citations
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Patent

Stabilized oscillator circuit for plasma density measurement

TL;DR: In this paper, a method and system for controlling electron densities in a plasma processing system was proposed, by applying a dither voltage and a correction voltage to a voltage-controlled oscillator.
Patent

Electron density measurement and plasma process control system using a microwave oscillator locked to an open resonator containing the plasma

TL;DR: In this article, a system for measuring plasma electron densities (e.g., in the range of 10?10 to 1012 cm-3?) and for controlling a plasma generator (240) is presented.
Patent

Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillator

TL;DR: In this article, a method and system for measuring at least one of a plasma density and an electron density (e.g., in a range of 10?10 to 1012 cm-3) enables plasma-assisted processes, such as depositions or etches, to be controlled using a feedback control.
Patent

Electron density measurement and plasma process control system using changes in the resonant frequency of an open resonator containing the plasma

TL;DR: In this article, a programmable frequency source (201) sequentially excites a number of the resonant modes of an open resonator placed within the plasma processing apparatus, depending on the plasma electron density in the space between the reflectors.
Journal ArticleDOI

Q-band injection-locked gunn diode oscillator

TL;DR: In this paper, the configuration and performance of a Q-band injection-locked Gunn oscillator are presented whose outport is connected with a phase-locked reference source by a circulator.
References
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Proceedings ArticleDOI

A Wideband, Backshort-Tunable Second Harmonic W-Band Gunn-Oscillator

H. Barth
TL;DR: In this article, a more than 15 GHz backshort tunable 2nd harmonic 90 GHz oscillator is presented, which is also well suited for "in line" power combiners.
Proceedings ArticleDOI

GaAs Gunn Oscillators Reach the 140 GHz Range

H. Barth, +1 more
TL;DR: In this paper, the design and performance of an 135 GHz, 3rd harmonic oscillator utilizing a 45 GHz Ga As-Gunn device is described, where an idler circuit for the 2nd harmonic wave is built in.