Patent
Aluminum based conductor for via fill and interconnect
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TLDR
In this article, a semiconductor device including a dielectric layer having a opening form therein having a cross-sectional area of less than 1 μm 2 and a PVD aluminum base conductor filled in the opening is described.Abstract:
A semiconductor device including a dielectric layer having a opening form therein having a cross-sectional area of less than 1 μm 2 and a PVD aluminum base conductor filled in the opening.read more
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Patent
Method for reducing stress and improving step-coverage of tungsten interconnects and plugs
TL;DR: In this article, a method for improving the step coverage of tungsten interconnects and plugs when deposited at low temperatures into contact/via openings having high aspect ratios is described.
Patent
Method of improving the texture of aluminum metallization for tungsten etch back processing
Wei-Yung Hsu,Qi-Zhong Hong +1 more
TL;DR: In this article, a method of making connection between an aluminum or aluminum based material and tungsten is proposed. But the method requires the underlying region to contain an underlying region containing a layer of Tungsten thereover.