Proceedings ArticleDOI
BiCMOS and CMOS timing detectors for the receiver of a portable laser rangefinding device
Tarmo Ruotsalainen,P. Palojarvi,Juha Kostamovaara +2 more
- Vol. 2, pp 1022-1025
TLDR
Integrated CMOS and BiCMOS timing detectors have been designed for the receiver of a portable laser radar to produce accurately timed logic level pulses from noisy analog pulses, whose amplitude varies in a wide range.Abstract:
Integrated CMOS and BiCMOS timing detectors have been designed for the receiver of a portable laser radar. The timing detectors produce accurately timed logic level pulses from noisy analog pulses, whose amplitude varies in a wide range. The distance measurement result of the designed BiCMOS (CMOS) detector varies +/-4 mm (+/-9 mm) with an input amplitude range of 55 mV-3.3 V (0.5 V-2.2 V). The single shot resolution with SNR=250 is better than 6 mm (10.5 mm).read more
Citations
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Journal ArticleDOI
Integrated time-of-flight laser radar
TL;DR: In this paper, a hand-held pulsed time-of-flight (TOF) laser radar device has been designed and tested and an accuracy of 35 mm is achieved with a measuring time of 200 ms between temperatures of -10/spl deg/C and +30/spl dc/C. Power consumption during continuous measurement is 0.84 W.
Integrated electronic and optoelectronic circuits and devices for pulsed time-of-flight laser rangefinding
TL;DR: In this article, a multi-channel pulsed time-of-flight (TOF) laser radar module is implemented on a single chip using a photodiode structure, which can achieve mm-level accuracy in a measurement range from 4 m to 34 m with non-cooperative targets.
Integrated receiver channel circuits and structures for a pulsed time-of-flight laser radar
TL;DR: The achievable performance level using integrated circuit technology is comparable or superior to that of the previously developed commercially available discrete component implementations, and the significantly reduced size and power consumption open up new application areas.
Proceedings ArticleDOI
Photodiodes for High-Frequency Applications Implemented in CMOS and BiCMOS Processes
TL;DR: In this article, the high frequency behavior of integrated pn- photodiodes is discussed and measurement results of two different types of photododes, one implemented in a standard 1.2 micrometers BiCMOS process and the other in a 0.8 micrometer CMOS process are presented.
References
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Book
Analog signal processing and instrumentation
TL;DR: This new paperback edition of Professor Arbel's text for electronic systems designers treats integrated circuits as black boxes whose properties are specified by the manufacturer and shows bow to design circuits that make the best use of them.