scispace - formally typeset
Patent

Chamber pressure state-based control for a reactor

Reads0
Chats0
TLDR
A process chamber containing a substrate has at least one process gas introduced for reacting with a surface of the substrate to form a layer on the substrate, and the gas creates a certain pressure in the chamber as discussed by the authors.
Abstract
A process chamber containing a substrate has at least one process gas introduced for reacting with a surface of the substrate to form a layer on the substrate. The gas creates a certain pressure in the chamber. At a certain time, the gas is expelled to end the reaction, and the gas pressure is reduced. The detection of the change in pressure in said chamber automatically controls valves to supply a second gas into the chamber to further react with the surface of the substrate.

read more

Citations
More filters
Patent

Apparatus and method for plasma assisted deposition

TL;DR: In this paper, the authors present an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region, where a power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top and bottom shower plates.
Patent

Gas delivery apparatus for atomic layer deposition

TL;DR: In this paper, an apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition, is provided. But this method is not suitable for high-dimensional data.
Patent

Apparatus and process for plasma-enhanced atomic layer deposition

TL;DR: In this article, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen, and the insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas regions with the groove.
Patent

Formation of boride barrier layers using chemisorption techniques

TL;DR: In this paper, a method of forming a boride layer for integrated circuit fabrication is described, which is based on chemisorbing monolayers of boron-containing compound and one refractory metal compound onto a substrate.
Patent

Gas delivery apparatus and method for atomic layer deposition

TL;DR: In this article, the authors present a gas delivery assembly with an expanding channel at a central portion of a covering member and a bottom surface extending from the expanding channel to a peripheral portion of the covering member.