V
Vincent W. Ku
Researcher at Applied Materials
Publications - 26
Citations - 2943
Vincent W. Ku is an academic researcher from Applied Materials. The author has contributed to research in topics: Barrier layer & Layer (electronics). The author has an hindex of 18, co-authored 26 publications receiving 2943 citations.
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Patent
Gas delivery apparatus for atomic layer deposition
TL;DR: In this paper, an apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition, is provided. But this method is not suitable for high-dimensional data.
Patent
Gas delivery apparatus and method for atomic layer deposition
TL;DR: In this article, the authors present a gas delivery assembly with an expanding channel at a central portion of a covering member and a bottom surface extending from the expanding channel to a peripheral portion of the covering member.
Patent
Method of film deposition using activated precursor gases
TL;DR: In this paper, a method for depositing a film on a substrate using an activated reducing gas is described, where the activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process.
Patent
Method and apparatus for providing gas to a processing chamber
TL;DR: In this paper, a method and apparatus for generating gas for a processing system is described, which includes a canister having at least one baffle disposed between two ports and containing a precursor material.
Patent
Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application
Ling Chen,Hua Chung,Sean M. Seutter,Michael Yang,Ming Xi,Vincent W. Ku,Dien-Yeh Wu,Alan Ouye,Norman Nakashima,Barry Chin,Hong Zhang +10 more
TL;DR: In this paper, a method for forming a metal interconnect on a substrate is provided, which consists of depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of metal containing compound and one or multiple pulses of nitrogen containing compound.