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Charged particle beam drawing apparatus and method

Yasuo Kato
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TLDR
In this article, a charged particle beam drawing apparatus has a movable stage which supports a mask, the mask being formed by applying a resist to an upper surface of a mask substrate, an optical column for applying a charge to draw patterns in the resist, a charge correction portion for correcting a dose of the charge applied from the optical column to the resist on the basis of proximity effect and fogging effect.
Abstract
A charged particle beam drawing apparatus has a drawing chamber including a movable stage which supports a mask, the mask being formed by applying a resist to an upper surface of a mask substrate, an optical column for applying a charged particle beam to draw patterns in the resist, a charged particle beam dose correction portion for correcting a dose of the charged particle beam applied from the optical column to the resist on the basis of proximity effect and fogging effect, and a conversion coefficient changing portion for changing a conversion coefficient on the basis of pattern density in the resist and a position in the resist, wherein the conversion coefficient is a ratio of an accumulation energy of the charged particle beam accumulated in the resist, to an accumulation dose of the charged particle beam accumulated in the resist.

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Patent

Method and System for Forming Patterns with Charged Particle Beam Lithography

Akira Fujimura, +1 more
TL;DR: In this paper, a method for mask data preparation (MDP) is disclosed, in which a set of shots is determined that will form a pattern on a reticle, where the determination includes calculating the pattern that will be formed on a substrate using an optical lithographic process with a reticles formed using the set of shot.
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Method and system for design of a reticle to be manufactured using variable shaped beam lithography

TL;DR: In this paper, a method for fracturing or mask data preparation or proximity effect correction of a desired pattern to be formed on a reticle is disclosed in which a plurality of variable shaped beam (VSB) shots are determined which can form the desired pattern.
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Charged particle beam writing apparatus and charged particle beam writing method

Jun Yashima
TL;DR: A charged particle beam writing apparatus includes a unit calculating a total charge amount of charged particle beams irradiating each minimum deflection region in deflection regions having different deflection sizes respectively deflected by deflectors of a plurality of levels as mentioned in this paper.
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Method and system for forming high accuracy patterns using charged particle beam lithography

TL;DR: In this paper, a method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particlebeam shots is enhanced by use of partially-overlapping shots.
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Method and system for critical dimension uniformity using charged particle beam lithography

TL;DR: In this article, a method for mask data preparation or mask process correction is disclosed in which a set of charged particle beam shots is determined which is capable of forming a pattern on a surface, wherein critical dimension uniformity (CDU) of the pattern is optimized.
References
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Patent

Charged particle beam writing method and apparatus

Takayuki Abe, +1 more
TL;DR: In this article, a charged particle beam writing method is described, where a shot of a particle is irradiated and the charged particle is written using a plurality of deflectors arranged on an optical path of the particle.
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Beam dose computing method and writing method and record carrier body and writing apparatus

TL;DR: In this article, a beam dose computing method is proposed, where a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, is specified.
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Multiple irradiation effect-corrected dose determination technique for charged particle beam lithography

TL;DR: In this paper, a charged-particle beam microlithographic apparatus is made up of a pattern writing unit and a system controller, which includes a unit for correcting proximity and fogging effects occurrable during pattern writing.
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Pattern decision method and system, mask manufacturing method, image-forming performance adjusting method, exposure method and apparatus, program, and information recording medium

TL;DR: Based on adjustment information on the adjustment unit under predetermined exposure conditions, pattern correction information, information on a permissible range of the imageforming performance, and the like, a calculation step and a setting step are repeatedly performed in the case an image-forming performance in at least one exposure apparatus is outside the permissible range under the target exposure conditions until the image forming performance in all the exposure apparatus was within the permissible ranges.
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Method and device of charged particle beam lithography

TL;DR: In this paper, a drawing method and a device for drawing with the amount of beam irradiation for executing highly accurate compensation for variation of dimension was provided. But, the drawing method was not suitable for high dimensional drawings.