Patent
Chemical vapor deposition method and apparatus therefor
TLDR
In this paper, the carrier gas is heated by a gas heater before entering the three-way valve to generate a source gas by contacting a high-temperature carrier gas which flows there through and becomes mixed with the source gas.Abstract:
Fixed amounts of a liquid source for a chemical vapor deposition process is supplied continuously from a source tank (12) and through a liquid mass flow controller (14) to a three-way valve (16). Inside the three-way valve (16), the liquid source is evaporated to generate a source gas by contacting a high-temperature carrier gas which flows therethrough and becomes mixed with the source gas. The gas mixture thus generated is supplied into a process chamber (24) for a chemical vapor deposition process. The carrier gas may be heated by a gas heater (18, 20) before entering the three-way valve. Alternatively, the three-way valve (16) may be enclosed inside a thermostatic container, the carrier gas being heated inside the container.read more
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Patent
Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practising said method
Tetsuo Asaba,Kenji Makino +1 more
TL;DR: In this article, a chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material is presented, in which the film-formed liquid is chemically reacted with a surface of a substrate disposed in a reaction chamber.
Patent
Apparatus and method for forming thin film
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Vaporization sequence for multiple liquid precursors used in semiconductor thin film applications
TL;DR: In this paper, a process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources, where the source with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold connected to a processing chamber, with the point of introduction being spaced away from the processing chamber.
Patent
Chemical vapor deposition method
TL;DR: A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gas starting material into a reaction chamber of a CVD apparatus is described in this paper.
References
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Patent
Method and apparatus for delivering a controlled flow rate of reactant to a vapour deposition process
David N. Payne,E.J. Tarbox +1 more
TL;DR: In this article, a high degree of accuracy of control can be achieved by metering liquid reactant, evaporating it and feeding the vapour to the reaction zone in a finely dispersed form and allowed to vaporise therein.