Patent
Crystal growth method for gallium nitride-based compound semiconductor
TLDR
In this article, a gallium nitride-based compound semiconductor is grown on the surface of a buffer layer represented by formula Ga X Al 1-X N (0 <×≦1).Abstract:
Crystals of a gallium nitride-based compound semiconductor are grown on the surface of a buffer layer represented by formula Ga X Al 1-X N (0<×≦1). The crystallinity of the gallium nitride-based compound semiconductor grown on the surface of the buffer layer can be drastically improved.read more
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Nitride semiconductor light emitting device
TL;DR: In this paper, a p-type n-type semiconductor layer is provided in contact with the other surface of the active layer of a single-quantum well structure and a second n-style semiconductor is provided on the first layer.
Patent
Light-radiating semiconductor component with a luminescence conversion element
Ulrike Reeh,Klaus Höhn,Norbert Stath,Günter Waitl,Peter Schlotter,Jürgen Schneider,Ralf Schmidt +6 more
TL;DR: In this article, a light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element, which converts a portion of the radiation into radiation of a longer wavelength.
Patent
Nitride semiconductor device
Shinichi Nagahama,Masayuki Nichia Chemical Industries Ltd. Senoh,Shuji Nichia Chemical Industries Ltd. Nakamura +2 more
TL;DR: In this paper, the super lattice structure of a light emitting device (LED) was proposed to make working current and voltage of the device lower, resulting in realization of more efficient devices.
Patent
Vertical geometry light emitting diode with group iii nitride active layer and extended lifetime
TL;DR: In this article, a light emitting diode (LED) is characterized by an extended lifetime, which consists of a conductive silicon carbide substrate (21), an ohmic contact (22) to the substrate, conductive buffer layer (23), and a double heterostructure (24) including a p-n junction on the buffer layer in which the active (25) and heterostructures layers (26, 27) are selected from the group consisting of binary Group III nitrides and ternary Group III compounds having the formula AxB1-x
Patent
Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
TL;DR: In this article, a transition crystal structure for providing a good lattice and thermal match between a layer of single crystal silicon carbide and a single crystal gallium nitride was disclosed.
References
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Patent
Substrate for growing gallium nitride compound-semiconductor device and light emitting diode
TL;DR: A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate.
Patent
Process for growing III-V compound semiconductors on sapphire using a buffer layer
Isamu Akasaki,Nobuhiko Sawaki +1 more
TL;DR: In this paper, an organometallic vapor phase hetero-epitaxial process for growing Al x Ga 1-x N films on a sapphire substrate is described.
Patent
Semiconductor light-emitting device
TL;DR: In this article, a light-emitting device consisting of a sapphire substrate, an epitaxial layer of monocrystalline semiconductor p-type gallium nitride, and a layer of semiconductor-type aluminum nitride was presented.
Patent
Method of making a gallium nitride light-emitting diode
TL;DR: In this paper, the substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached to the surface of the substrate prior to growing an n-type conductive gallium-nitride layer and a semi-insulating gallium oxide layer thereon.
Patent
ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN
TL;DR: An electroluminescent semiconductor device including a body of insulating, crystalline gallium nitride and a pair of contacts electrically connected to spaced points of the body is described in this paper.
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