Patent
Crystallized silicon-on-insulator nonvolatile memory device
TLDR
In this paper, a nonvolatile memory device is presented, which utilizes a laser beam recrystallized silicon layer having source-channel-drain regions, where a gate is formed directly on a substrate of an insulative material (e.g. non-silicon material).Abstract:
Disclosed is a nonvolatile memory device which utilizes a laser beam recrystallized silicon layer having source-channel-drain regions. Underlying the recrystallized layer and separated therefrom by a memory dielectric is a gate in alignment with the source and drain. The gate is formed directly on a substrate of an insulative material (e.g. non-silicon material). The process of forming the above device comprises forming a conductive polysilicon gate on a substrate followed by a memory nitride layer deposition thereon. A thick oxide layer is formed over the nitride followed by removal of the thick oxide corresponding to a central portion of the gate thereby exposing the nitride therebeneath. The exposed nitride surface is thermally converted into a thin, stoichiometric memory SiO2. A doped polysilicon layer is then formed on the structure and thereafter converted to recrystallized silicon by subjecting it to laser radiation. The recrystallized silicon is patterned into the device active area and a source and drain in alignment with the underlying gate are implanted therein.read more
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References
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Patent
MOS/SOS Process
TL;DR: In this article, an MOS process for fabricating multi-layer integrated circuits particularly suited for SOS fabrication is described, where transistors are fabricated both on the substrate level and in an overlying polysilicon layer.
Journal ArticleDOI
Threshold-alterable Si-gate MOS devices
TL;DR: In this paper, an electrically threshold-alterable n-channel MOS device with polysilicon gate is experimentally realized by employing a polyicon-oxynitride-nitride-oxide-silicon (SONOS) structure.
Patent
Semiconductor device having insulating film
Takashi Ito,Takao Nozaki +1 more
TL;DR: In this article, the gate insulation film is used for a gate insulation in MISFETs, a capacitor or passivation film for semiconductor devices, and as a mask for selectively forming circuit elements.
Patent
Method of fabricating an mos memory array having electrically-programmable and electrically-erasable storage devices incorporated therein
TL;DR: In this article, a method for fabricating an MOS memory array is disclosed, wherein the method includes steps for constructing electricallyprogrammable and electrically-erasable memory cells (2, 198, 200) in combination with assorted peripheral devices (202, 204, 206) on a semiconductor substrate (8, 71).
Patent
Gate electrode for MNOS semiconductor memory device
TL;DR: In this paper, the gate electrode materials are either titanium or p + -doped polycrystalline silicon, with a gate dielectric layer having a low density of trapping states throughout its volume.