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Journal ArticleDOI

Depletion-Layer Transduction of Surface Waves on Piezoelectric Semiconductor

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TLDR
In this paper, a pair of interdigital transducers is constructed by evaporating Au on the (111) plane of GaAs, resulting in the formation of the Schottky barrier under the electrodes of the transducers.
Abstract
Effective generation and detection of surface elastic waves on semiconducting GaAs are achieved by using the depletion-layer which avoids the screening of piezoelectric fields by free carriers A pair of interdigital transducers is constructed by evaporating Au on the (111) plane of GaAs, resulting in the formation of the Schottky barrier under the electrodes of the transducers The surface wave of 25 MHz is propagated along the direction Applying the dc bias voltage to the Schottky barrier, the signal level is increased up to 30 dB A fairly good agreement is obtained between an analysis and the experiments

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Journal ArticleDOI

Charge transport by surface acoustic waves in GaAs

TL;DR: The traveling wave potential wells associated with a surface acoustic wave (SAW) generated in a multilayer epitaxial GaAs structure are used to transport electrons at the velocity of sound in the buried channel formed by a Schottky N-P layer configuration as discussed by the authors.
Proceedings ArticleDOI

GaAs Monolithic SAW Devices for Signal Processing and Frequency Control

TL;DR: In this paper, the basic transduction and propagation characteristics for the Rayleigh wave on (110) GaAs are reviewed for device operation in the 100-200 MHz frequency range, and recent developments in the design and performance of 2-port resonator filters, tunable SAW phase shifters, and programmable matched filters are presented.
Journal ArticleDOI

Electron Devices on Piezoelectric Semiconductors: A Device Model

TL;DR: In this paper, the effects of acoustic waves on the terminal characteristics of electron devices on piezoelectric semiconductors are considered. And the authors propose a new model for the acousto-electric interaction in electron devices such as diodes or FET's located in the acoustic beam path.
Book ChapterDOI

Rayleigh Waves on Gallium Arsenide

R. T. Webster, +1 more
TL;DR: In this article, surface acoustic wave technology on gallium arsenide considering SAW propagation characteristics, transduction techniques, and unique device structures afforded by the piezoelectric semiconductor properties.
References
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Proceedings Article

Physics of semiconductor devices

S. M. Sze